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Mannino, G., Spinella, C., Ruggeri, R., La Magna, A., Fisicaro, G., Fazio, E., et al. (2010). Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation. Appl. Phys. Lett., 97(2), 3.
Abstract: We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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Zwiller, V. <cc><81>ry, Blom, H., Jonsson, P., Panev, N., Jeppesen, S., Tsegaye, T., et al. (2001). Single quantum dots emit single photons at a time: Antibunching experiments. Appl. Phys. Lett., 78(17), 2476.
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Rodriguez-Morales, F., Zannoni, R., Nicholson, J., Fischetti, M., Yngvesson, K. S., & Appenzeller, J. (2006). Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube. Appl. Phys. Lett., 89(8), 083502.
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Fedorov, G., Kardakova, A., Gayduchenko, I., Charayev, I., Voronov, B. M., Finkel, M., et al. (2013). Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation. Appl. Phys. Lett., 103(18), 181121 (1 to 5).
Abstract: We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
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Kardakova, A., Finkel, M., Morozov, D., Kovalyuk, V., An, P., Dunscombe, C., et al. (2013). The electron-phonon relaxation time in thin superconducting titanium nitride films. Appl. Phys. Lett., 103(25), 252602 (1 to 4).
Abstract: We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.
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