Marsili, F., Verma, V. B., Stern, J. A., Harrington, S., Lita, A. E., Gerrits, T., et al. (2013). Detecting single infrared photons with 93% system efficiency. Nat. Photon., 7(3), 210–214.
Abstract: Single-photon detectors1 at near-infrared wavelengths with high system detection efficiency (>90%), low dark count rate (<1 c.p.s.), low timing jitter (<100 ps) and short reset time (<100 ns) would enable landmark experiments in a variety of fields2, 3, 4, 5, 6. Although some of the existing approaches to single-photon detection fulfil one or two of the above specifications1, to date, no detector has met all of the specifications simultaneously. Here, we report on a fibre-coupled single-photon detection system that uses superconducting nanowire single-photon detectors7 and closely approaches the ideal performance of single-photon detectors. Our detector system has a system detection efficiency (including optical coupling losses) greater than 90% in the wavelength range λ = 1,520–1,610 nm, with a device dark count rate (measured with the device shielded from any background radiation) of ~1 c.p.s., timing jitter of ~150 ps full-width at half-maximum (FWHM) and reset time of 40 ns.
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Tanner, M. G., Natarajan, C. M., Pottapenjara, V. K., O'Connor, J. A., Warburton, R. J., Hadfield, R. H., et al. (2010). Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon. Appl. Phys. Lett., 96(22), 3.
Abstract: Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
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