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Antipov, S., Trifonov, A., Krause, S., Meledin, D., Desmaris, V., Belitsky, V., et al. (2017). Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency. In Proc. 28th Int. Symp. Space Terahertz Technol. (pp. 147–148).
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Antipov, S., Trifonov, A., Krause, S., Meledin, D., Kaurova, N., Rudzinski, M., et al. (2019). Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer. Supercond. Sci. Technol., 32(7), 075003.
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Belitsky, V. Y., & Tarasov, M. A. (1991). SIS junction reactance complete compensation. IEEE Trans. Magn., 27(2), 2638–2641.
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Belitsky, V. Y., & Kollberg, E. L. (1996). Tuning circuit for NbN SIS mixer. In Proc. 7th Int. Symp. Space Terahertz Technol. (234). Charlottesville, Virginia, USA.
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Belitsky, V., Desmaris, V., Dochev, D., Meledin, D., & Pavolotsky, A. (2011). Towards Multi-Pixel Heterodyne Terahertz Receivers. In Proc. 22th Int. Symp. Space Terahertz Technol..
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