Bueno, J., Coumou, P. C. J. J., Zheng, G., de Visser, P. J., Klapwijk, T. M., Driessen, E. F. C., et al. (2014). Anomalous response of superconducting titanium nitride resonators to terahertz radiation. Appl. Phys. Lett., 105, 192601 (1 to 5).
Abstract: We present an experimental study of kinetic inductance detectors (KIDs) fabricated of atomic layer deposited TiN films and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with the increase in radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride/aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggest that an inhomogeneous state of these disordered superconductors should be used to explain these observations.
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Coumou, P. C. J. J., Driessen, E. F. C., Bueno, J., Chapelier, C., & Klapwijk, T. M. (2013). Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films. Phys. Rev. B, 88(18), 180505 (1 to 5).
Abstract: We have studied the electrodynamic response of strongly disordered superconducting TiN films using microwave resonators, where the disordered superconductor is the resonating element in a high-quality superconducting environment of NbTiN. We describe the response assuming an effective pair-breaking mechanism modifying the density of states and compare this to local tunneling spectra obtained using scanning tunneling spectroscopy. For the least disordered film (kFl=8.7, Rs=13Ω), we find good agreement, whereas for the most disordered film (kFl=0.82, Rs=4.3kΩ), there is a strong discrepancy, which signals the breakdown of a model based on uniform properties.
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Kardakova, A. I., Coumou, P. C. J. J., Finkel, M. I., Morozov, D. V., An, P. P., Goltsman, G. N., et al. (2015). Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films. IEEE Trans. Appl. Supercond., 25(3), 1–4.
Abstract: We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
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