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Tanner, M. G., Natarajan, C. M., Pottapenjara, V. K., O'Connor, J. A., Warburton, R. J., Hadfield, R. H., et al. (2010). Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon. Appl. Phys. Lett., 96(22), 3.
Abstract: Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
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Dorenbos, S. N., Reiger, E. M., Perinetti, U., Zwiller, V., Zijlstra, T., & Klapwijk, T. M. (2008). Low noise superconducting single photon detectors on silicon. Appl. Phys. Lett., 93(13), 131101.
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Driessen, E. F. C., Braakman, F. R., Reiger, E. M., Dorenbos, S. N., Zwiller, V., & de Dood, M. J. A. (2009). Impedance model for the polarization-dependent optical absorption of superconducting single-photon detectors. Eur. Phys. J. Appl. Phys., 47, 10701.
Abstract: We measured the single-photon detection efficiency of NbN superconducting single-photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization contrast varies from ~% at 488 nm to~0% at 1550 nm, in good agreement with numerical calculations. We use an optical-impedance model to describe the absorption for polarization parallel to the wires of the detector. For the extremely lossy NbN material, the absorption can be kept constant by keeping the product of layer thickness and filling factor constant. As a consequence, the maximum possible absorption is independent of filling factor. By illuminating the detector through the substrate, an absorption efficiency of ~0% can be reached for a detector on Si or GaAs, without the need for an optical cavity.
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Dorenbos, S. N., Heeres, R. W., Driessen, E. F. C., & Zwiller, V. (2011). Efficient and robust fiber coupling of superconducting single photon detectors. arXiv, , 6.
Abstract: We applied a recently developed fiber coupling technique to superconducting single photon detectors (SSPDs). As the detector area of SSPDs has to be kept as small as possible, coupling to an optical fiber has been either inefficient or unreliable. Etching through the silicon substrate allows fabrication of a circularly shaped chip which self aligns to the core of a ferrule terminated fiber in a fiber sleeve. In situ alignment at cryogenic temperatures is unnecessary and no thermal stress during cooldown, causing misalignment, is induced. We measured the quantum efficiency of these devices with an attenuated tunable broadband source. The combination of a lithographically defined chip and high precision standard telecommunication components yields near unity coupling efficiency and a system detection efficiency of 34% at a wavelength of 1200 nm. This quantum efficiency measurement is confirmed by an absolute efficiency measurement using correlated photon pairs (with $\lambda$ = 1064 nm) produced by spontaneous parametric down-conversion. The efficiency obtained via this method agrees well with the efficiency measured with the attenuated tunable broadband source.
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