Marsili, F., Bitauld, D., Divochiy, A., Gaggero, A., Leoni, R., Mattioli, F., et al. (2008). Superconducting nanowire photon number resolving detector at telecom wavelength. In CLEO/QELS (Qmj1 (1 to 2)). Optical Society of America.
Abstract: We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches.
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Gaggero, A., Nejad, S. J., Marsili, F., Mattioli, F., Leoni, R., Bitauld, D., et al. (2010). Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl. Phys. Lett., 97(15), 3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Casaburi, A., Ejrnaes, M., Quaranta, O., Gaggero, A., Mattioli, F., Leoni, R., et al. (2008). Experimental characterization of NbN nanowire optical detectors with parallel stripline configuration. In J. Phys.: Conf. Ser. (Vol. 97, 012265 (1 to 6)). IOP Publishing.
Abstract: We have developed a novel geometrical configuration for NbN-based superconducting single photon optical detector (SSPD) that achieves two goals: a much lower intrinsic impedance, and a consequently greater bandwidth, and a much larger signal amplitude compared to the standard meandered configuration. This has been obtained by implementing a properly designed parallel stripline structure where a cascade switching mechanism occurs when one of the striplines is hit by an optical photon. The overall switching occurs synchronously and in a very short time, giving rise to a strong and fast voltage pulse. The SSPD have been realized using state of the art NbN deposition technology and e-beam lithography. The strips are 100 nm wide and 5 μm long and have been realized with 4 nm NbN film on sapphire and Si substrate. We report on experimental characterization of such novel devices. The performances of the proposed novel type of SSPD are compared with standard SSPD design and results in terms of signal amplitude, risetime and effective detection area.
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Ejrnaes, M., Cristiano, R., Quaranta, O., Pagano, S., Gaggero, A., Mattioli, F., et al. (2007). A cascade switching superconducting single photon detector. Appl. Phys. Lett., 91(26), 262509 (1 to 3).
Abstract: We have realized superconducting single photon detectors with reduced inductance and increased signal pulse amplitude. The detectors are based on a parallel connection of ultrathin NbN nanowires with a common bias inductance. When properly biased, an absorbed photon induces a cascade switch of all the parallel wires generating a signal pulse amplitude of 2mV. The parallel wire configuration lowers the detector inductance and reduces the response time well below 1ns.
This work was performed in the framework of the EU project “SINPHONIA” NMP4-CT-2005-016433.
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Marsili, F., Bitauld, D., Fiore, A., Gaggero, A., Leoni, R., Mattioli, F., et al. (2009). Superconducting parallel nanowire detector with photon number resolving functionality. J. Modern Opt., 56(2-3), 334–344.
Abstract: We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.
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