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Gershenzon, E. M., Gol'tsman, G. N., & Mel'nikov, A. P. (1971). Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett., 14(5), 185–186.
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Gershenzon, E. M., & Gol'tsman, G. N. (1971). Transitions of electrons between excited states of donors in germanium. JETP Lett., 14(2), 63–65.
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Gershenzon, E. M., Gol'tsman, G. N., Emtsev, V. V., Mashovets, T. V., Ptitsyna, N. G., & Ryvkin, S. M. (1971). Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett., 14(6), 241.
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Cherednichenko, S., Drakinskiy, V., Baubert, J., Lecomte, B., Dauplay, F., Krieg, J. M., et al. (2006). 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers. In Proc. SPIE (Vol. 6275, 62750I (1 to 11)).
Abstract: A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.
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