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Il’in, K. S., Milostnaya, I. I., Verevkin, A. A., Gol’tsman, G. N., Gershenzon, E. M., & Sobolewski, R. (1998). Ultimate quantum efficiency of a superconducting hot-electron photodetector. Appl. Phys. Lett., 73(26), 3938–3940.
Abstract: The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs.
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Elvira, D., Michon, A., Fain, B., Patriarche, G., Beaudoin, G., Robert-Philip, I., et al. (2010). Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm. Appl. Phys. Lett., 97(13), 131907 (1 to 3).
Abstract: By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.
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Rasulova, G. K., Brunkov, P. N., Pentin, I. V., Egorov, A. Y., Knyazev, D. A., Andrianov, A. V., et al. (2012). A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter. Appl. Phys. Lett., 100(13), 131104 (1 to 4).
Abstract: The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations.
This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia).
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Zinoni, C., Alloing, B., Li, L. H., Marsili, F., Fiore, A., Lunghi, L., et al. (2010). Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)]. Appl. Phys. Lett., 96(8), 089901.
Abstract: A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.
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Zinoni, C., Alloing, B., Li, L. H., Marsili, F., Fiore, A., Lunghi, L., et al. (2007). Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors. Appl. Phys. Lett., 91(3), 031106 (1 to 3).
Abstract: The authors report fiber-coupled superconducting single-photon detectors with specifications that exceed those of avalanche photodiodes, operating at telecommunication wavelength, in sensitivity, temporal resolution, and repetition frequency. The improved performance is demonstrated by measuring the intensity correlation function g(2)(τ) of single-photon states at 1300nm produced by single semiconductor quantum dots.
This work was supported by Swiss National Foundation through the “Professeur borsier” and NCCR Quantum Photonics program, FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433), IP “QAP” (Contract No. 15848), NOE “ePIXnet,” and the Italian MIUR-FIRB program.
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