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Shcherbatenko, M., Lobanov, Y., Finkel, M., Maslennikov, S., Pentin, I., Semenov, A., et al. (2014). Development of a 30 THz heterodyne receiver based on a hot-electron-bolometer mixer. In Proc. 25th Int. Symp. Space Terahertz Technol. (122).
Abstract: We present new Hot-Electron-Bolometer (HEB) mixers designed for mid-IR spectroscopy targeting astrophysical and geophysical observations where high sensitivity and spectral resolution are required. The mixers are made of an ultrathin NbN film deposited on GaAs substrates. Two entirely different types of the devices have been fabricated. The first type is based on a direct radiation coupling concept and the mixing devices are shaped as squares of 5×5 μm 2 (which corresponds to the diffraction limit at the chosen wavelength) and 10×10 μm 2 (which was used to establish a possible influence of the contact pads on the radiation absorption). The second type utilizes a spiral antenna designed with HFSS. The fabrication and layout of the devices as well as the performance comparison will be presented. During the experiments, the HEB mixer was installed on the cold plate of a LHe cryostat. A germanium window and an extended semi-spherical germanium lens are used to couple the radiation. The cryostat is equipped with a germanium optical filter of thickness 0.5 mm and with a center wavelength of 10.6 mμ. The incident power absorption is measured by using the isothermal method. As a Local Oscillator, a 10.6 micrometers line of a CO2 gas laser is used. We further characterize the frequency response of the spiral antenna with a FIR-spectrometer. The noise characteristics of the mixers are determined from a room temperature cold load and a heated black body at ~600 K as a hot load.
Keywords: mid-IR NbN HEB mixers, GaAs substrates
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Shurakov, A., Maslennikov, S., Tong, C. -yu E., & Gol’tsman, G. (2015). Performance of an HEB direct detector utilizing a microwave reflection readout scheme. In Proc. 26th Int. Symp. Space Terahertz Technol. (36).
Abstract: We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014.
Keywords: HEB detector
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Shurakov, A., Tong, C. -yu E., Blundell, R., & Gol’tsman, G. (2014). A microwave pumped HEB direct detector using a homodyne readout scheme. In Proc. 25th Int. Symp. Space Terahertz Technol. (129).
Abstract: We report the results of our study on the noise performance of a fast THz detector based on the repurpose of hot electron bolometer mixer (HEB). Instead of operating with an elevated bath temperature, microwave power is injected into the HEB device, which enhances the sensitivity of the detector and at the same time provide a mechanism for reading out impedance changes of the device induced by the modulated incident THz radiation [1]. We have demonstrated an improvement of the detector’s optical noise equivalent power (NEP). Furthermore, by introducing a homodyne readout scheme based on a room temperature microwave mixer, the dynamic range of the detector is increased. The HEB devices used in this work were made of 4 nm thick NbN film. The detector chips were installed into a waveguide mixer block fitted with a corrugated horn, mounted on the cold plate of a liquid helium cryostat. The HEBs were operated at a bath temperature of 4.2 K. The signal beam was terminated on black bodies at ambient and liquid nitrogen temperatures. A chopper wheel placed in front of the cryostat window operating at a frequency of 1.48 kHz modulated the input load temperature of the detector. A cold mesh filter, centered at 830 GHz, was used to define the input signal power bandwidth. Microwave was injected through a broadband directional coupler inside the cryostat. Our experiments were mostly conducted at a pump frequency of 1.5 GHz. The reflected microwave power from the HEB device was fed into a cryogenic low noise amplifier (LNA). The output of the LNA was connected to the RF input port of a room temperature microwave mixer, which beat the reflected signal from the HEB using a copy of the original 1.5 GHz injection signal in a homodyne demodulation scheme. The amplitude of the detected power was measured by a lock-in amplifier, which was synchronized to the chopper frequency. Preliminary results yield an optical NEP of ~1 pW/ Hz 1/2 which corresponds to an improvement of a factor of 3 compared to [1], driven mainly by a lowering of the system noise floor. The dynamic range was also increased by similar amount. References 1. A. Shurakov et al. “A Microwave Pumped Hot Electron Bolometric Direct Detector,” submitted on Oct 18, 2013 to Appl. Phys. Let.
Keywords: waveguide NbN HEB detector, NEP
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Tong, C. E., Trifonov, A., Blundell, R., Shurakov, A., & Gol’tsman, G. (2014). A digital terahertz power meter based on an NbN thin film. In Proc. 25th Int. Symp. Space Terahertz Technol. (170).
Abstract: We have further studied the effect of subjecting a superconducting Hot Electron Bolometer (HEB) element made from an NbN thin film to microwave radiation. Since the photon energy is weak, the microwave radiation does not simply heat the film, but generates a bi-static state, switching between the superconducting and normal states, upon the application of a small voltage bias. Indeed, a relaxation oscillation of a few MHz has previously been reported in this regime [1]. Switching between the superconducting and normal states modulates the reflected microwave pump power from the device. A simple homodyne setup readily recovers the spontaneous switching waveform in the time domain. The switching frequency is a function of both the bias voltage (DC heating) and the applied microwave power. In this work, we use a 0.8 THz HEB waveguide mixer for the purpose of demonstration. The applied microwave pump, coupled through a directional coupler, is at 1 GHz. Since the pump power is of the order of a few μW, a room temperature amplifier is sufficient to amplify the reflected pump power from the HEB mixer, which beats with the microwave source in a homodyne set-up. After further amplification, the switching waveform is passed onto a frequency counter. The typical frequency of the switching pulses is 3-5 MHz. It is found that the digital frequency count increases with higher microwave pump power. When the HEB mixer is subjected to additional optical power at 0.8 THz, the frequency count also increases. When we vary the incident optical power by using a wire grid attenuator, a linear relationship is observed between the frequency count and the applied optical power, over at least an order of magnitude of power. This phenomenon can be exploited to develop a digital power meter, using a very simple electronics setup. Further experiments are under way to determine the range of linearity and the accuracy of calibration transfer from the microwave to the THz regime. References 1. Y. Zhuang, and S. Yngvesson, “Detection and interpretation of bistatic effects in NbN HEB devices,” Proc. 13 th Int. Symp. Space THz Tech., 2002, pp. 463–472.
Keywords: waveguide NbN HEB mixers
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Trifonov, A., Tong, C. E., Lobanov, Y., Kaurova, N., Blundell, R., & Gol’tsman, G. (2015). An investigation of the DC and IF performance of silicon-membrane HEB mixer elements. In Proc. 26th Int. Symp. Space Terahertz Technol. (40).
Abstract: We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 – 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K.
Keywords: silicon-membrane HEB waveguide mixer
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