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Vahtomin, Y. B., Finkel, M. I., Antipov, S. V., Voronov, B. M., Smirnov, K. V., Kaurova, N. S., et al. (2002). Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si. In Harvard university (Ed.), Proc. 13th Int. Symp. Space Terahertz Technol. (pp. 259–270). Cambridge, MA, USA.
Abstract: We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
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Finkel, M., Vachtomin, Y., Antipov, S., Drakinski, V., Kaurova, N., Voronov, B., et al. (2003). Gain bandwidth and noise temperature of NbTiN HEB mixer. In Proc. 14th Int. Symp. Space Terahertz Technol. (pp. 276–285).
Abstract: We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.
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Maslennikova, A., Tretyakov, I., Ryabchun, S., Finkel, M., Kaurova, N., Voronov, B., et al. (2010). Gain bandwidth and noise temperature of NbN HEB mixers with simultaneous phonon and diffusion cooling. In Proc. 21th Int. Symp. Space Terahertz Technol. (pp. 218–219).
Abstract: The space observatory Millimetron will be operating in the millimeter, sub-millimeter and infrared ranges using a 12-m cryogenic telescope in a single-dish mode, and as an interferometer with the space-earth and space-space baselines (the latter after the launch of the second identical space telescope). The observatory will allow performing astronomical observations with an unprecedented sensitivity (down to nJy level) in the single-dish mode, and observations with a high angular resolution in the interferometer mode. The total spectral range 20 μm – 2 cm is separated into 10 bands. HEB mixers with two cooling channels (diffusion and phonon) have been chosen to be the detectors of choice of the system covering the range from 1 THz to 6 THz as the best detectors in terahertz receivers. This type of HEB has already shown good work in the terahertz range. A gain bandwidth of 6 GHz at an LO frequency of 300 GHz and a noise temperature of 750 K at an LO frequency of 2.5 THz are the best values for HEB mixers with two cooling channels [1]. Theoretical estimations predict a bandwidth up to 12 GHz. Reaching such good result demands more systematic and thorough research. We present the results of the gain bandwidth and noise temperature measurements for superconducting hot- electron bolometer mixers with two cooling channels. These characteristics of the devices of lengths varying from 50 to 200 nm were measured for the purposes of Millimetron at frequencies of 600 GHz, 2.5 THz, and 3.8 THz. For gain bandwidth measurements we use two BWO’s operating at 600 GHz: one as the signal and the second as the LO. The noise temperature measurements were performed using a gas discharge laser as the LO and blackbodies at 77 K and 295 K as input signals. The devices studied consist of 3.5-nm-thick NbN bridges connected to thick (10 nm) high conductivity Au leads fabricated in situ. This method of fabricating devices has already proved promising by opening the diffusion cooling channel. [2] Fig. 1 shows a SEM photograph of a log-spiral antenna with an HEB at its apex. Fig. 1. Left: a SEM photograph of a log-spiral antenna with an HEB at its apex; right: a close-up of the HEB at the antenna apex. [1] S. A. Ryabchun, I. V. Tretyakov, M. I. Finkel, S. N. Maslennikov, N. S. Kaurova, V. A. Seleznev, B. M. Voronov, and G. N. Gol’tsman, NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling, Proc. of the 20 th Int. Symp. Space. Technol., Charlottesville, Virginia, USA, April 20 – 22, 2009. 218[2] S. A. Ryabchun * , I. V. Tretyakov, M. I. Finkel, S. N. Maslennikov, N. S. Kaurova, V. A. Seleznev, B. M. Voronov and G. N. Goltsman, Fabrication and characterisation of NbN HEB mixers with in situ gold contacts, Proc. of the 19 th Int. Symp. Space. Technol., Groningen, The Netherlands, April 28-30, 2008
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Trifonov, A., Tong, C. E., Lobanov, Y., Kaurova, N., Blundell, R., & Gol’tsman, G. (2015). An investigation of the DC and IF performance of silicon-membrane HEB mixer elements. In Proc. 26th Int. Symp. Space Terahertz Technol. (40).
Abstract: We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 – 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K.
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Jiang, L., Miao, W., Zhang, W., Li, N., Lin, Z. H., Yao, Q. J., et al. (2006). Characterization of quasi-optical NbN phonon-cooled superconducting HEB mixers. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 55–58).
Abstract: In this paper, we thoroughly investigate the performance of quasi-optical NbN phonon-cooled superconducting hot-electron bolometer (HEB) mixers, cryogenically cooled by a close-cycled 4-K refrigerator at 500 GI-1z and 850 GHz. The uncorrected lowest receiver noise Abstract---In temperatures measured are 800 K at 500 CHz without anti-reflection coating, and 1000 K @ 850 GHz with a 50 11M thick Mylar anti-reflection coating. The dependence of receiver noise temperature on the critical current and bath temperature of HEB mixer is also investigated here. Lifetime of quasi-optical superconducting NbN HEB mixers of different volumes, room temperature resistances, and critical temperatures are thoroughly studied. Increased room temperature resistance with time over the initial resistance changes between 1 and 1.2, and the reduced critical current with time over the initial value fluctuates slightly around 0.7 for most HEB mixers even of different volumes, room temperature resistances, and critical temperatures. The critical current degrades sharply vvhile room temperature resistance varies over 1.25.
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