Gol'tsman, G. N., Karasik, B. S., Okunev, O. V., Dzardanov, A. L., Gershenzon, E. M., Ekstrom, H., et al. (1995). NbN hot electron superconducting mixers for 100 GHz operation. IEEE Trans. Appl. Supercond., 5(2), 3065–3068.
Abstract: NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K.
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Ekström, H., Kroug, M., Belitsky, V., Kollberg, E., Olsson, H., Goltsman, G., et al. (1996). Hot electron mixers for THz applications. In E. J. Rolfe, & G. Pilbratt (Eds.), Proc. 30th ESLAB (pp. 207–210).
Abstract: We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
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Ekström, H., Kollberg, E., Yagoubov, P., Gol'tsman, G., Gershenzon, E., & Yngvesson, S. (1997). Phonon cooled ultra thin NbN hot electron bolometer mixers at 620 GHz. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 29–35).
Abstract: We have measured the noise performance and gain bandwidth of 35 A thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. A double-sideband receiver noise temperature less than 1300 K has been obtained with a 3 dB bandwidth of GHz. The gain bandwidth is 3.2 GHz. A lower noise temperature of 1100 K has been achieved with an improved set-up. The mixer output noise dominated by thermal fluctuations is about 50-60 K, and the SSB receiver and intrinsic conversion gain is about -18 and -12 dB, respectively. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
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Ekstrom, H., Karasik, B., Weikle, R., Yngvesson, K. S., Gol’tsman, G., Kollberg, E., et al. (1993). Mixers using superconducting Nb films in the resistive state. In 23rd European Microwave Conf. (pp. 787–789).
Abstract: The mixing of 20 GHz radiation in a Nb superconducting film in the resistive state was studied. The experiment gave evidence of electron-heating to be the origin of the non-linear phenomenon. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are determined. Our measurements indicate a conversion loss of about 6-8 dB. The hot-electron bolometer is considered to be very promising for use in heterodyne receivers in a wide frequency range from microwaves to terahertz frequencies.
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Ekström, H., Karasik, B., Kollberg, E., & Yngvesson, K. S. (1994). Investigation of a superconducting hot electron mixer. In Proc. 5th Int. Symp. Space Terahertz Technol. (pp. 169–188).
Abstract: Mixing at 20 GHz in niobium superconducting thin film strips in the resistive state is studied. Experiments give evidence that electron-heating is the main cause of the non linear phenomena. The requirements on the mode of operation and on the film parameters for small conversion loss and the possibility of conversion gain are discussed. Measurements indicate a minimum intrinsic conversion loss around 1 dB with a sharp drop for the lowest voltage bias-points, and a DSB mixer noise temperature between 100 and 450 K at 20 GHz. The device output noise temperature at the mixer operating point can be as low as 30-50 K. A simple theory is presented, which is based on the assumption that the small signal resistance is linearly dependent on power. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.
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