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Semenov, A., Goltsman, G., & Korneev, A. (2001). Quantum detection by current carrying superconducting film. Phys. C: Supercond., 351(4), 349–356.
Abstract: We describe a novel quantum detection mechanism in the superconducting film carrying supercurrent. The mechanism incorporates growing normal domain and breaking of superconductivity by the bias current. A single photon absorbed in the film creates transient normal spot that causes redistribution of the current and, consequently, increase of the current density in superconducting areas. When the current density exceeds the critical value, the film switches into resistive state and generates the voltage pulse. Analysis shows that a submicron-wide film of conventional low temperature superconductor operated in liquid helium may detect single far-infrared photon. The amplitude and duration of the voltage pulse are in the millivolt and picosecond range, respectively. The quantitative model is presented that allows simulation of the detector utilizing this detection mechanism.
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Semenov, A. V., Devyatov, I. A., Korneev, A. A., Smirnov, K. V., Goltsman, G. N., & Melnikov, A. P. (2012). Derivation of expression for thermodynamic potential of “dirty” superconductor. Rus. J. Radio Electron., (4).
Abstract: We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices.
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Sclafani, M., Marksteiner, M., Keir, F. M. L., Divochiy, A., Korneev, A., Semenov, A., et al. (2012). Sensitivity of a superconducting nanowire detector for single ions at low energy. Nanotechnol., 23(6), 065501 (1 to 5).
Abstract: We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles.
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Ryabchun, S., Korneev, A., Matvienko, V., Smirnov, K., Kouminov, P., Seleznev, V., et al. (2004). Superconducting single photon detectors array based on hot electron phenomena. In Proc. 15th Int. Symp. Space Terahertz Technol. (pp. 242–247).
Abstract: In this paper we propose to use time domain multiplexing for large format arrays of superconducting single photon detectors (SSPDs) of the terahertz, visible and infrared frequency ranges based on ultrathin superconducting NbN films. Effective realization of time domain multiplexing for SSPD arrays is possible due to a short electric pulse of the SSPD as response to radiation quantum absorption, picosecond jitter and extremely low noise equivalent power (NEP). We present experimental results of testing 2×2 arrays in the infrared waveband. The measured noise equivalent power in the infrared and expected for the terahertz waveband is 10 – 21 WHz -1/2 . The best quantum efficiency (QE) of SSPD is 50% at 1.3 µm wavelength.
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Rubtsova, I., Korneev, A., Matvienko, V., Chulkova, G., Milostnaya, I., Goltsman, G., et al. (2004). Spectral sensitivity, quantum efficiency, and noise equivalent power of NbN superconducting single-photon detectors in the IR range. In Proc. 29th IRMMW / 12th THz (pp. 461–462).
Abstract: We have developed nanostructured NbN superconducting single-photon detectors capable of GHz-rate photon counting in the 0.4 to 5 /spl mu/m wavelength range. Quantum efficiency of 30%, dark count rate 3/spl times/10/sup -4/ s/sup -1/, and NEP=10/sup -20/ W/Hz/sup -1/2/ have been measured at the 1.3-/spl mu/m wavelength for the device operating at 2.0 K.
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