Pentin, I. V., Smirnov, A. V., Ryabchun, S. A., Gol’tsman, G. N., Vaks, V. L., Pripolzin, S. I., et al. (2011). Heterodyne source of THz range based on semiconductor superlattice multiplier. In IRMMW-THz (pp. 1–2).
Abstract: We present the results of our studies of the possibility of developing a heterodyne receiver incorporating a hot-electron bolometer mixer as the detector and a semiconductor superlattice multiplier driven by a reference synthesizer as the local oscillator. We observe that such a local oscillator offers enough power in the terahertz range to pump the HEB into the operating state.
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Smirnov, K. V., Vakhtomin, Y. B., Divochiy, A. V., Ozhegov, R. V., Pentin, I. V., & Gol'tsman, G. N. (2010). Infrared and terahertz detectors on basis of superconducting nanostructures. In IEEE (Ed.), Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf. (pp. 823–824).
Abstract: Results of development of single-photon receiving systems of visible, infrared and terahertz range based on thin-film superconducting nanostructures are presented. The receiving systems are produced on the basis of superconducting nanostructures, which function by means of hot-electron phenomena.
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Ryabchun, S. A., Tretyakov, I. V., Pentin, I. V., Kaurova, N. S., Seleznev, V. A., Voronov, B. M., et al. (2009). Low-noise wide-band hot-electron bolometer mixer based on an NbN film. Radiophys. Quant. Electron., 52(8), 576–582.
Abstract: We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
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Rasulova, G. K., Brunkov, P. N., Pentin, I. V., Kovalyuk, V. V., Gorshkov, K. N., Kazakov, A. Y., et al. (2011). Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices. Tech. Phys., 56(6), 826–830.
Abstract: The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation.
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Rasulova, G. K., Pentin, I. V., Vakhtomin, Y. B., Smirnov, K. V., Khabibullin, R. A., Klimov, E. A., et al. (2020). Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime. J. Appl. Phys., 128(22), 224303 (1 to 11).
Abstract: The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.
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