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Ryabchun, S., Smirnov, A., Pentin, I., Vakhtomin, Y., Smirnov, K., Kaurova, N., et al. (2011). Superconducting single photon detector integrated with optical cavity. In Proc. MLPLIT (pp. 143–145). Modern laser physics and laser-information technologies for science and manufacture.
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Maslennikova, A., Larionov, P., Ryabchun, S., Smirnov, A., Pentin, I., Vakhtomin, Y., et al. (2011). Noise equivalent power and dynamic range of NBN hot-electron bolometers. In Proc. MLPLIT (pp. 146–148). Modern laser physics and laser-information technologies for science and manufacture.
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Pentin, I., Vakhtomin, Y., Seleznev, V., & Smirnov, K. (2020). Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation. Sci. Rep., 10(1), 16819.
Abstract: The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.
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Kitaeva, G. K., Kornienko, V. V., Kuznetsov, K. A., Pentin, I. V., Smirnov, K. V., & Vakhtomin, Y. B. (2019). Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion. Opt. Lett., 44(5), 1198–1201.
Abstract: We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed.
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Ryabchun, S. A., Tretyakov, I. V., Pentin, I. V., Kaurova, N. S., Seleznev, V. A., Voronov, B. M., et al. (2009). Low-noise wide-band hot-electron bolometer mixer based on an NbN film. Radiophys. Quant. Electron., 52(8), 576–582.
Abstract: We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
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