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Tretyakov, I., Shurakov, A., Perepelitsa, A., Kaurova, N., Svyatodukh, S., Zilberley, T., et al. (2019). Silicon room temperature IR detectors coated with Ag2S quantum dots. In Proc. IWQO (pp. 369–371).
Abstract: For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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Trifonov, A., Tong, C. - Y. E., Blundell, R., Ryabchun, S., & Gol'tsman, G. (2015). Probing the stability of HEB mixers with microwave injection. IEEE Trans. Appl. Supercond., 25(3), 2300404 (1 to 4).
Abstract: Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%.
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Ryabchun, S., Tong, C. - Y. E., Blundell, R., Kimberk, R., & Gol'tsman, G. (2007). Study of the effect of microwave radiation on the operation of HEB mixers in the terahertz frequency range. IEEE Trans. Appl. Supercond., 17(2), 391–394.
Abstract: We have investigated the effect of injecting microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the hot-electron bolometer mixer incorporated into a THz heterodyne receiver. More specifically, we show that exposing the mixer to microwave radiation does not cause a significant rise of the receiver noise temperature and fall of the mixer conversion gain so long as the microwave power is a small fraction of local oscillator power. The injection of a small, but controlled amount of microwave power therefore enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the gain stability of hot electron bolometer mixer receivers.
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Ryabchun, S., Smirnov, A., Pentin, I., Vakhtomin, Y., Smirnov, K., Kaurova, N., et al. (2011). Superconducting single photon detector integrated with optical cavity. In Proc. MLPLIT (pp. 143–145). Modern laser physics and laser-information technologies for science and manufacture.
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Maslennikova, A., Larionov, P., Ryabchun, S., Smirnov, A., Pentin, I., Vakhtomin, Y., et al. (2011). Noise equivalent power and dynamic range of NBN hot-electron bolometers. In Proc. MLPLIT (pp. 146–148). Modern laser physics and laser-information technologies for science and manufacture.
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