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Peltonen, J. T., Peng, Z. H., Korneeva, Y. P., Voronov, B. M., Korneev, A. A., Semenov, A. V., et al. (2016). Coherent dynamics and decoherence in a superconducting weak link. Physic. Rev. B,, 94, 180508.
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Saveskul, N. A., Titova, N. A., Baeva, E. M., Semenov, A. V., Lubenchenko, A. V., Saha, S., et al. (2019). Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder. arXiv:1903.05009v3 [cond-mat.mtrl-sci].
Abstract: We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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Semenov, A. V., Devyatov, I. A., Korneev, A. A., Smirnov, K. V., Goltsman, G. N., & Melnikov, A. P. (2012). Derivation of expression for thermodynamic potential of “dirty” superconductor. Rus. J. Radio Electron., (4).
Abstract: We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices.
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Saveskul, N. A., Titova, N. A., Baeva, E. M., Semenov, A. V., Lubenchenko, A. V., Saha, S., et al. (2019). Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder. Phys. Rev. Applied, 12(5), 054001.
Abstract: We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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Klapwijk, T. M., & Semenov, A. V. (2017). Engineering physics of superconducting hot-electron bolometer mixers. IEEE Trans. THz Sci. Technol., 7(6), 627–648.
Abstract: Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments.
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