Sergeev, A., Semenov, A., Trifonov, V., Karasik, B., Gol'tsman, G., & Gershenzon, E. (1994). Heat transfer in YBaCuO thin film/sapphire substrate system. J. Supercond., 7(2), 341–344.
Abstract: The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.
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Sergeev, A., & Mitin, V. (2000). Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials. Phys. Rev. B., 61(9), 6041–6047.
Abstract: Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film.
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Sergeev, A., Karasik, B. S., Ptitsina, N. G., Chulkova, G. M., Il'in, K. S., & Gershenzon, E. M. (1999). Electron–phonon interaction in disordered conductors. Phys. Rev. B Condens. Matter, 263-264, 190–192.
Abstract: The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
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Sergeev, A. V., Semenov, A. D., Kouminov, P., Trifonov, V., Goghidze, I. G., Karasik, B. S., et al. (1994). Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation. Phys. Rev. B Condens. Matter., 49(13), 9091–9096.
Abstract: The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.
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Sergeev, A. V., & Livanov, D. V. (1993). Phonon renormalization of thermoelectric power of high-Tc materials. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 204–205).
Abstract: Renormalization of thermoelectric power due to Nielsen — Taylor effect (interference between electron-phonon and electron- impurity interactions) is used for the explanation of the temperature dependence and sign of the thermopower in high-Tc materials. In the framework of the model the negative sign of TEP of untwinned YBa2Cu3O7−x crystal in a-direction observed by Howson et. al. is connected to the strong hole scattering via O-vacancies in chains.
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