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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol'tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1997). Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 163–166).
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Vasilev, D. D., Malevannaya, E. I., Moiseev, K. M., Zolotov, P. I., Antipov, A. V., Vakhtomin, Y. B., et al. (2020). Influence of deposited material energy on superconducting properties of the WSi films. In IOP Conf. Ser.: Mater. Sci. Eng. (Vol. 781, 012013 (1 to 6)).
Abstract: WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
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Vakhtomin, Y. B., Finkel, M. I., Antipov, S. V., Smirnov, K. V., Kaurova, N. S., Drakinskii, V. N., et al. (2003). The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J. of communications technol. & electronics, 48(6), 671–675.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Vachtomin, Y. B., Antipov, S. V., Kaurova, N. S., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., et al. (2004). Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess. In Proc. 29th IRMMW / 12th THz (pp. 329–330). Karlsruhe, Germany.
Abstract: We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area.
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Vachtomin, Y. B., Antipov, S. V., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., Zhang, W., et al. (2006). Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region. In Proc. 16th Int. Crimean Microwave and Telecommunication Technology (Vol. 2, pp. 688–689).
Abstract: Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area
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Vachtomin, Y. B., Antipov, S. V., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., Kaurova, N. S., et al. (2004). Noise temperature measurements of NbN phonon-cooled hot electron bolometer mixer at 2.5 and 3.8 THz. In Proc. 15th Int. Symp. Space Terahertz Technol. (pp. 236–241). Northampton, Massachusetts, USA.
Abstract: We present the results of noise temperature measurements of NbN phonon-cooled HEB mixers based on a 3.5 nm NbN film deposited on a high-resistivity Si substrate with a 200 nm – thick MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 µm x 0.2 µm active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. We also present the results of direct detection contribution to the measured Y-factor and of a possible error of noise temperature calculation. This error was more than 8% for the mixer with in-plane dimensions of 2.4 x 0.16 µm 2 at the optimal noise temperature point. The use of a mesh filter enabled us to avoid the effect of direct detection and decrease optical losses by 0.5 dB. The paper is concluded by the investigation results of the mixer polarization response. It was shown that the polarization can differ from the circular one at 3.8 THz by more than 2 dB.
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Svechnikov, S. I., Finkel, M. I., Maslennikov, S. N., Vachtomin, Y. B., Smirnov, K. V., Seleznev, V. A., et al. (2006). Superconducting hot electron bolometer mixer for middle IR range. In Proc. 16th Int. Crimean Microwave and Telecommunication Technology (Vol. 2, pp. 686–687).
Abstract: The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
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Smirnov, K. V., Vakhtomin, Y. B., Divochiy, A. V., Ozhegov, R. V., Pentin, I. V., Slivinskaya, E. V., et al. (2009). Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures. In Proc. Progress In Electromagnetics Research Symp. (pp. 863–864). Moscow, Russia.
Abstract: The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types ofdetectors [1, 2] and their use both in fundamental and applied studies [3–6]. In this paper, wepresent the results of the development and fabrication of receiving systems for the visible andinfrared parts of the spectrum optimised for use in telecommunication systems and quantumcryptography.
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Smirnov, K. V., Vakhtomin, Y. B., Divochiy, A. V., Ozhegov, R. V., Pentin, I. V., & Gol'tsman, G. N. (2010). Infrared and terahertz detectors on basis of superconducting nanostructures. In IEEE (Ed.), Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf. (pp. 823–824).
Abstract: Results of development of single-photon receiving systems of visible, infrared and terahertz range based on thin-film superconducting nanostructures are presented. The receiving systems are produced on the basis of superconducting nanostructures, which function by means of hot-electron phenomena.
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Smirnov, K. V., Vachtomin, Y. B., Antipov, S. V., Maslennikov, S. N., Kaurova, N. S., Drakinsky, V. N., et al. (2003). Noise and gain performance of spiral antenna coupled HEB mixers at 0.7 THz and 2.5 THz. In Proc. 14th Int. Symp. Space Terahertz Technol. (pp. 405–412).
Abstract: Noise and gain performance of hot electron bolometer (HEB) mixers based on ultrathin superconducting NbN films integrated with a spiral antenna was studied. The noise temperature measurements for two samples with different active area of 3 p.m x 0.24 .tni and 1.3 1..tm x 0.12 1.tm were performed at frequencies 0.7 THz and 2.5 THz. The best receiver noise temperatures 370 K and 1600 K, respectively, have been found at these frequencies. The influence of contact resistance between the superconductor and the antenna terminals on the noise temperature of HEB is discussed. The noise and gain bandwidth of 5GHz and 4.2 GHz, respectively, are demonstrated for similar HEB mixer at 0.75 THz.
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