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Vachtomin, Y. B., Antipov, S. V., Kaurova, N. S., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., et al. (2004). Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess. In Proc. 29th IRMMW / 12th THz (pp. 329–330). Karlsruhe, Germany.
Abstract: We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area.
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Jiang, L., Miao, W., Zhang, W., Li, N., Lin, Z. H., Yao, Q. J., et al. (2006). Characterization of a quasi-optical NbN superconducting HEB mixer. IEEE Trans. Microwave Theory Techn., 54(7), 2944–2948.
Abstract: In this paper, the performance of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer, cryogenically cooled by a close-cycled 4-K refrigerator, is thoroughly investigated at 300, 500, and 850 GHz. The lowest receiver noise temperatures measured at the respective three frequencies are 1400, 900, and 1350 K, which can go down to 659, 413, and 529 K, respectively, after correcting the loss and associated noise contribution of the quasi-optical system before the measured superconducting HEB mixer. The stability of the quasi-optical superconducting HEB mixer is also investigated here. The Allan variance time measured with a local oscillator pumping at 500 GHz and an IF bandwidth of 110 MHz is 1.5 s at the dc-bias voltage exhibiting the lowest noise temperature and increases to 2.5 s at a dc bias twice that voltage.
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Karasik, B. S., Gol'tsman, G. N., Voronov, B. M., Svechnikov, S. I., Gershenzon, E. M., Ekstrom, H., et al. (1995). Hot electron quasioptical NbN superconducting mixer. IEEE Trans. Appl. Supercond., 5(2), 2232–2235.
Abstract: Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform.
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Svechnikov, S. I., Okunev, O. V., Yagoubov, P. A., Gol'tsman, G. N., Voronov, B. M., Cherednichenko, S. I., et al. (1997). 2.5 THz NbN hot electron mixer with integrated tapered slot antenna. IEEE Trans. Appl. Supercond., 7(2), 3548–3551.
Abstract: A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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Jiang, L., Zhang, W., Yao, Q. J., Lin, Z. H., Li, J., Shi, S. C., et al. (2005). Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer. In Proc. PIERS (Vol. 1, pp. 587–590).
Abstract: In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated.
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