Antipov, S., Trifonov, A., Krause, S., Meledin, D., Kaurova, N., Rudzinski, M., et al. (2019). Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer. Supercond. Sci. Technol., 32(7), 075003.
Abstract: We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
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Korneev, A. A., Divochiy, A. V., Vakhtomin, Y. B., Korneeva, Y. P., Larionov, P. A., Manova, N. N., et al. (2013). IR single-photon receiver based on ultrathin NbN superconducting film. Rus. J. Radio Electron., (5).
Abstract: We present our recent results in research and development of superconducting single-photon detector (SSPD). We achieved the following performance improvement: first, we developed and characterized SSPD integrated in optical cavity and enabling its illumination from the face side, not through the substrate, second, we improved the quantum efficiency of the SSPD at around 3 μm wavelength by reduction of the strip width to 40 nm, and, finally, we improved the detection efficiency of the SSPD-based single-photon receiver system up to 20% at 1550 nm and extended its wavelength range beyond 1800 nm by the usage of the fluoride ZBLAN fibres.
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Trifonov, A., Tong, C. - Y. E., Grimes, P., Lobanov, Y., Kaurova, N., Blundell, R., et al. (2017). Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver. In IEEE Trans. Appl. Supercond. (Vol. 27, 6).
Abstract: We report on the development of a multi-pixel
Hot Electron Bolometer (HEB) receiver fabricated using
silicon membrane technology. The receiver comprises a
2 × 2 array of four HEB mixers, fabricated on a single
chip. The HEB mixer chip is based on a superconducting
NbN thin film deposited on top of the silicon-on-insulator
(SOI) substrate. The thicknesses of the device layer and
handling layer of the SOI substrate are 20 μm and 300 μm
respectively. The thickness of the device layer is chosen
such that it corresponds to a quarter-wave in silicon at
1.35 THz. The HEB mixer is integrated with a bow-tie
antenna structure, in turn designed for coupling to a
circular waveguide,
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Lusche, R., Semenov, A., Ilin, K., Siegel, M., Korneeva, Y., Trifonov, A., et al. (2014). Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors. J. Appl. Phys., 116(4), 043906 (1 to 9).
Abstract: A thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths has been performed. The experiment shows that the cut-off of the intrinsic detection efficiency at near-infrared wavelengths is most likely controlled by the local suppression of the barrier for vortex nucleation around the absorption site. Beyond the cut-off quasi-particle diffusion in combination with spontaneous, thermally activated vortex crossing explains the detection process. For both materials, the reciprocal cut-off wavelength scales linearly with the wire width where the scaling factor agrees with the hot-spot detection model.
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Trifonov, A., Tong, C. - Y. E., Grimes, P., Lobanov, Y., Kaurova, N., Blundell, R., et al. (2017). Development of a silicon membrane-based multipixel hot electron bolometer receiver. IEEE Trans. Appl. Supercond., 27(4), 1–5.
Abstract: We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
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