|
|
Gershenzon, E. M., Gol'tsman, G. N., Karasik, B. S., Lugovaya, G. Y., Serebryakova, N. A., & Chinkova, E. V. (1992). Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials. Sverkhprovodimost': Fizika, Khimiya, Tekhnika, 5(6), 1129–1140.
Abstract: Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response.
|
|
|
|
Gershenzon, E. M., Gol'tsman, G. N., Dzardanov, A. L., Elant'ev, A. I., Zorin, M. A., Markin, A. G., et al. (1992). S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation. Sverkhprovodimost': Fizika, Khimiya, Tekhnika, 5(12), 2386–2402.
Abstract: A study was made on processes of switching of thin niobium film strips between superconducting and normal states under the effect of optical radiation pulse and voltage step. The results are described satisfactorily by the model of spatial homogeneous electron heating. It is shown that limiting switching times can be equal to several shares of nanosecond at 4.2 K. Preliminary results for YBa2Cu3O-7-x films are presented. Prospects and advantages of creation of ducting structures of narrow streps, are discussed.
|
|
|
|
Budyanskij, M. Y., Sejdman, L. A., Voronov, B. M., & Gubkina, T. O. (1992). Increase of reproducibility in production of superconducting thin films of niobium nitride. Sverkhprovodimost': Fizika, Khimiya, Tekhnika, 5(10), 1950–1954.
Abstract: Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value.
|
|
|
|
Varyukhin, S. V., Zakharov, A. A., Gershenzon, E. M., Gol'tsman, G. N., Ptitsina, N. G., & Chulkova, G. M. (1990). Low energy excitation in La2CuO4. Sverkhprovodimost': Fizika, Khimiya, Tekhnika, 3(5), 832–837.
Abstract: Measurements of transmission and photoconductivity spectra in submillimeter wave length range as well as of capacity C and conductivity G in the region of acoustic frequencies of metal-dielectric-La2CuO4 system at low temperatures are performed using La2CuO4 monocrystals. Optical spectra posses a threshold character, a sharp decrease of transmission and photocoductivity signal occurs in the energy region hν>1.5 MeV. C(ω,T) and G(ω, T) dependences have a universal form typical of Debye type relaxation processes. Relaxation time dependence is of thermoactivated character τ(T)∼exp(ξ/T) with the gap value ξ≅2 meV. It is assumed that excitations with characteristic energy of ∼2 meV exist in La2CuO4. A possible nature of the detected low-energy excitations is discussed.
|
|
|
|
Verevkin, A. A., Ptitsina, N. G., Chulcova, G. M., Gol'tsman, G. N., Gershenzon, E. M., & Yngvesson, K. S. (1996). Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions. Surface Science, 361-362, 569–573.
Abstract: For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
|
|
