Vakhtomin, Y. B., Finkel, M. I., Antipov, S. V., Smirnov, K. V., Kaurova, N. S., Drakinskii, V. N., et al. (2003). The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J. of communications technol. & electronics, 48(6), 671–675.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Yagoubov, P., Gol'tsman, G., Voronov, B., Svechnikov, S., Cherednichenko, S., Gershenzon, E., et al. (1996). Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 303–317).
Abstract: In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).
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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Gol'tsman, G., Svechnikov, S., et al. (1998). Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies. Appl. Phys. Lett., 73(19), 2814–2816.
Abstract: In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW.
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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Hübers, H. - W., Schubert, J., et al. (1999). NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 238–246).
Abstract: The performance of NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1- 0.2 gm, the width is 1-2 gm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power required is less than 500 nW at the receiver input. First results on the spiral antenna polarization measurements are reported.
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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Schubert, J., Hubers, H. - W., et al. (1999). Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies. IEEE Trans. Appl. Supercond., 9(2), 3757–3760.
Abstract: The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.
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