Delacour, C., Claudon, J., Poizat, J. - P., Pannetier, B., Bouchiat, V., de Lamaestre, R. E., et al. (2007). Superconducting single photon detectors made by local oxidation with an atomic force microscope. Appl. Phys. Lett., 90(19), 191116 (1 t0 3).
Abstract: The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433.
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Smirnov, K., Korneev, A., Minaeva, O., Divochiy, A., Tarkhov, M., Ryabchun, S., et al. (2007). Ultrathin NbN film superconducting single-photon detector array. In J. Phys.: Conf. Ser. (Vol. 61, pp. 1081–1085).
Abstract: We report on the fabrication process of the 2 × 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes.
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Heeres, R. W., Dorenbos, S. N., Koene, B., Solomon, G. S., Kouwenhoven, L. P., & Zwiller, V. (2010). On-Chip Single Plasmon Detection. Nano Lett., 10, 661–664.
Abstract: Surface plasmon polaritons (plasmons) have the potential to interface electronic and optical devices. They could prove extremely useful for integrated quantum information processing. Here we demonstrate on-chip electrical detection of single plasmons propagating along gold waveguides. The plasmons are excited using the single-photon emission of an optically emitting quantum dot. After propagating for several micrometers, the plasmons are coupled to a superconducting detector in the near-field. Correlation measurements prove that single plasmons are being detected.
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Sobolewski, R., Verevkin, A., Gol'tsman, G. N., Lipatov, A., & Wilsher, K. (2003). Ultrafast superconducting single-photon optical detectors and their applications. IEEE Trans. Appl. Supercond., 13(2), 1151–1157.
Abstract: We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications.
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Il’in, K. S., Milostnaya, I. I., Verevkin, A. A., Gol’tsman, G. N., Gershenzon, E. M., & Sobolewski, R. (1998). Ultimate quantum efficiency of a superconducting hot-electron photodetector. Appl. Phys. Lett., 73(26), 3938–3940.
Abstract: The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs.
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