Проходцов, А. И., Голиков, А. Д., Ан, П. П., Ковалюк, В. В., & Гольцман, Г. Н. (2019). Влияние покрытия из оксида кремния на эффективность фокусирующего решеточного элемента связи из нитрида кремния. In Proc. IWQO (pp. 201–203).
Abstract: В работе экспериментально изучена зависимость эффективности фокусирующего решеточного элемента связи от периода и фактора заполнения до и после напыления верхнего слоя из оксида кремния. Полученные данные имеют практическое значение при создании перестраиваемых интегрально-оптических устройств на нитриде кремния.
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Trifonov, A., Tong, C. E., Lobanov, Y., Kaurova, N., Blundell, R., & Gol’tsman, G. (2015). An investigation of the DC and IF performance of silicon-membrane HEB mixer elements. In Proc. 26th Int. Symp. Space Terahertz Technol. (40).
Abstract: We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 – 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K.
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Trifonov, A., Tong, C. - Y. E., Grimes, P., Lobanov, Y., Kaurova, N., Blundell, R., et al. (2017). Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver. In IEEE Trans. Appl. Supercond. (Vol. 27, 6).
Abstract: We report on the development of a multi-pixel
Hot Electron Bolometer (HEB) receiver fabricated using
silicon membrane technology. The receiver comprises a
2 × 2 array of four HEB mixers, fabricated on a single
chip. The HEB mixer chip is based on a superconducting
NbN thin film deposited on top of the silicon-on-insulator
(SOI) substrate. The thicknesses of the device layer and
handling layer of the SOI substrate are 20 μm and 300 μm
respectively. The thickness of the device layer is chosen
such that it corresponds to a quarter-wave in silicon at
1.35 THz. The HEB mixer is integrated with a bow-tie
antenna structure, in turn designed for coupling to a
circular waveguide,
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Trifonov, A., Tong, C. - Y. E., Grimes, P., Lobanov, Y., Kaurova, N., Blundell, R., et al. (2017). Development of a silicon membrane-based multipixel hot electron bolometer receiver. IEEE Trans. Appl. Supercond., 27(4), 1–5.
Abstract: We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
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Tretyakov, I., Svyatodukh, S., Perepelitsa, A., Ryabchun, S., Kaurova, N., Shurakov, A., et al. (2020). Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector. Nanomaterials (Basel), 10(5), 1–12.
Abstract: In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
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