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Semenov, A., Engel, A., Il'in, K., Gol'tsman, G., Siegel, M., & Hübers, H. - W. (2003). Ultimate performance of a superconducting quantum detector. Eur. Phys. J. Appl. Phys., 21(3), 171–178.
Abstract: We analyze the ultimate performance of a superconducting quantum detector in order to meet requirements for applications in near-infrared astronomy and X-ray spectroscopy. The detector exploits a combined detection mechanism, in which avalanche quasiparticle multiplication and the supercurrent jointly produce a voltage response to a single absorbed photon via successive formation of a photon-induced and a current-induced normal hotspot in a narrow superconducting strip. The response time of the detector should increase with the photon energy providing energy resolution. Depending on the superconducting material and operation conditions, the cut-off wavelength for the single-photon detection regime varies from infrared waves to visible light. We simulated the performance of the background-limited infrared direct detector and X-ray photon counter utilizing the above mechanism. Low dark count rate and intrinsic low-frequency cut-off allow for realizing a background limited noise equivalent power of 10−20 W Hz−1/2 for a far-infrared direct detector exposed to 4-K background radiation. At low temperatures, the intrinsic response time of the counter is rather determined by diffusion of nonequilibrium electrons than by the rate of energy transfer to phonons. Therefore, thermal fluctuations do not hamper energy resolution of the X-ray photon counter that should be better than 10−3 for 6-keV photons. Comparison of new data obtained with a Nb based detector and previously reported results on NbN quantum detectors support our estimates of ultimate detector performance.
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Cherednichenko, S., Drakinskiy, V., Baubert, J., Krieg, J. - M., Voronov, B., Gol'tsman, G., et al. (2007). Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes. J. Appl. Phys., 101(12), 124508 (1 to 6).
Abstract: The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
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Burke, P. J., Schoelkopf, R. J., Prober, D. E., Skalare, A., Karasik, B. S., Gaidis, M. C., et al. (1999). Mixing and noise in diffusion and phonon cooled superconducting hot-electron bolometers. J. Appl. Phys., 85(3), 1644–1653.
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Kooi, J. W., Baselmans, J. J. A., Hajenius, M., Gao, J. R., Klapwijk, T. M., Dieleman, P., et al. (2007). IF impedance and mixer gain of NbN hot electron bolometers. J. Appl. Phys., 101(4), 044511.
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Hajenius, M., Baselmans, J. J. A., Baryshev, A., Gao, J. R., Klapwijk, T. M., Kooi, J. W., et al. (2006). Full characterization and analysis of a terahertz heterodyne receiver based on a NbN hot electron bolometer. J. Appl. Phys., 100(7), 074507.
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