Kovalyuk, V., Hartmann, W., Kahl, O., Kaurova, N., Korneev, A., Goltsman, G., et al. (2013). Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits. Opt. Express, 21(19), 22683–22692.
Abstract: We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits.
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Elezov, M., Ozhegov, R., Goltsman, G., & Makarov, V. (2019). Countermeasure against bright-light attack on superconducting nanowire single-photon detector in quantum key distribution. Opt. Express, 27(21), 30979–30988.
Abstract: We present an active anti-latching system for superconducting nanowire single-photon detectors. We experimentally test it against a bright-light attack, previously used to compromise security of quantum key distribution. Although our system detects continuous blinding, the detector is shown to be partially blindable and controllable by specially tailored sequences of bright pulses. Improvements to the countermeasure are suggested.
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Ferrari, S., Kovalyuk, V., Hartmann, W., Vetter, A., Kahl, O., Lee, C., et al. (2017). Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors. Opt. Express, 25(8), 8739–8750.
Abstract: We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.
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McCarthy, A., Krichel, N. J., Gemmell, N. R., Ren, X., Tanner, M. G., Dorenbos, S. N., et al. (2013). Kilometer-range, high resolution depth imaging via 1560 nm wavelength single-photon detection. Opt. Express, 21(7), 8904–8915.
Abstract: This paper highlights a significant advance in time-of-flight depth imaging: by using a scanning transceiver which incorporated a free-running, low noise superconducting nanowire single-photon detector, we were able to obtain centimeter resolution depth images of low-signature objects in daylight at stand-off distances of the order of one kilometer at the relatively eye-safe wavelength of 1560 nm. The detector used had an efficiency of 18% at 1 kHz dark count rate, and the overall system jitter was ~100 ps. The depth images were acquired by illuminating the scene with an optical output power level of less than 250 µW average, and using per-pixel dwell times in the millisecond regime.
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Rosfjord, K. M., Yang, J. K. W., Dauler, E. A., Kerman, A. J., Vikas Anant, Voronov, B. M., et al. (2006). Nanowire Single-photon detector with an integrated optical cavity and anti-reflection coating. Opt. Express, 14(2), 527–534.
Abstract: We have fabricated and tested superconducting single-photon detectors and demonstrated detection efficiencies of 57% at 1550-nm wavelength and 67% at 1064 nm. In addition to the peak detection efficiency, a median detection efficiency of 47.7% was measured over 132 devices at 1550 nm. These measurements were made at 1.8K, with each device biased to 97.5% of its critical current. The high detection efficiencies resulted from the addition of an optical cavity and anti-reflection coating to a nanowire photodetector, creating an integrated nanoelectrophotonic device with enhanced performance relative to the original device. Here, the testing apparatus and the fabrication process are presented. The detection efficiency of devices before and after the addition of optical elements is also reported.
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