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Sergeev, A. V., Semenov, A. D., Kouminov, P., Trifonov, V., Goghidze, I. G., Karasik, B. S., et al. (1994). Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation. Phys. Rev. B Condens. Matter., 49(13), 9091–9096.
Abstract: The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.
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Semenov, A. D., Nebosis, R. S., Gousev, Y. P., Heusinger, M. A., & Renk, K. F. (1995). Analysis of the nonequilibrium photoresponse of superconducting films to pulsed radiation by use of a two-temperature model. Phys. Rev. B, 52(1), 581–590.
Abstract: Photoresponse of a superconducting film in the resistive state to pulsed radiation has been studied in the framework of a model assuming that two different effective temperatures can be assigned to the quasiparticle and phonon nonequilibrium distributions. The coupled electron-phonon-substrate system is described by a system of time-dependent energy-balance differential equations for effective temperatures. An analytical solution of the system is given and calculated voltage transients are compared with experimental photoresponse signals taking into account the radiation pulse shape and the time resolution of the readout electronics. It is supposed that a resistive state (vortices, fluxons, network of intergrain junctions, hot spots, phase slip centers) provides an ultrafast connection between electron temperature changes and changes of the film resistance and thus plays a minor role in the temporal evolution of the response. In accordance with experimental observations a two-component response was revealed from simulations. The slower component corresponds to a bolometric mechanism while the fast component is connected with the relaxation of the electron temperature. Calculated photoresponse transients are presented for different ratios of the electron and phonon specific heat, radiation pulse durations and fluences, and frequency band passes of registration electronics. From the amplitude of the bolometric component we determine the radiation energy absorbed in a film. This enables us to reveal an intrinsic electron-phonon scattering time even if it is much shorter than the time resolution of readout electronics. We analyze experimental voltage transients for NbN, YBa2Cu3O7, and TlBa2Ca2Cu3O9 superconducting films and find the electron-phonon interaction times at the transition temperatures of 17, 2.5, and 1.8 ps, respectively. The values are in reasonable agreement with data of other experiments.
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Verevkin, A. A., Ptitsina, N. G., Chulcova, G. M., Gol'Tsman, G. N., Gershenzon, E. M., & Yngvesson, K. S. (1996). Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time. Phys. Rev. B Condens. Matter., 53(12), R7592–R7595.
Abstract: We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.
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Ptitsina N. G., Chulkova G. M., Il'in K. S., Sergeev A. V., Pochinkov F. S., & Gershenzon E. M. (1997). Superconductivity has been found in a number of new compounds between the non-superconducting transition elements and nonmetals such as Si, Ge, and Te. These findings have suggested possible criteria for superconductivity in both elements and compounds. Phys. Rev. B, 56(16).
Abstract: The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path L=1.5– 10 nm has been measured at 4.2–300 K. The resistance of all the films contains a T^2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference „M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 ~1987! @Sov. Phys. JETP 65, 1291 ~1987!#…, we obtain constants of nteraction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electronphonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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Ptitsina, N. G., Chulkova, G. M., Il’in, K. S., Sergeev, A. V., Pochinkov, F. S., Gershenzon, E. M., et al. (1997). Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate. Phys. Rev. B, 56(16), 10089–10096.
Abstract: The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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