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Yagubov, P., Gol'tsman, G., Voronov, B., Seidman, L., Siomash, V., Cherednichenko, S., et al. (1996). The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 290–302). Charlottesville, Virginia, USA.
Abstract: We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K.
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Altshuler, B. L., & Aronov, A. G. (1985). Electron-Electron Interactions in Disordered Systems. (pp. 1–151). Modern Problems in Condensed Matter Physics. North-Holland Pub. Co. Amsterdam-NY.
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Carlstrom, J. E., & Jonas Zmuidzinas. (1996). Millimeter and Submillimeter Techniques. (848). Review of radio science 1993–1996, (34). New York: Oxford University Press Inc.
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Betz, A. L., & Borejko, R. T. (1996). A practical Schottky mixer for 5 THz. In Proc. 7th Int. Symp. Space Terahertz Technol. (503).
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Hesler, J. L., Hall, W. R., Crowe, T. W., Weikle, R. M., Bradley, R. F., & Pan, S. - K. (1996). Submm wavelenght waveguide mixers using planar Schottky barier diods. In Proc. 7th Int. Symp. Space Terahertz Technol. (462).
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