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Koch, M. (2007). Terahertz communications: a 2020 vision. In NATO Security through Science Series (Vol. 2007, pp. 325–338).
Abstract: We discuss basic considerations for potential short-range THz communication systems which may replace or supplement present WLAN systems in 10–15 years from now. On the basis of a few fundamental estimations we show that such a system will need a line-of-sight connection between receiver and emitter. To circumvent the blocking of the direct line-of-sight connection indoor THz communication systems will also have to rely on non-line-of-sight paths which involve reflections off the walls. The reflectivity of the walls can be enhanced by dielectric mirrors. This new scheme makes steerable high-gain antennas a necessity. Hence, a wireless THz communication system can not be a simple extension of the existing technology of today's local area networks. Instead it involves completely new concepts and ideas that have not yet been worked upon.
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Zolotov, P., Divochiy, A., Vakhtomin, Y., Moshkova, M., Morozov, P., Seleznev, V., et al. (2018). Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range. In Proc. AIP Conf. (Vol. 1936, 020019).
Abstract: We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency.
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Baeva, E., Sidorova, M., Korneev, A., & Goltsman, G. (2018). Precise measurement of the thermal conductivity of superconductor. In Proc. AIP Conf. (Vol. 1936, 020003 (1 to 4)).
Abstract: Measuring the thermal properties such as the heat capacity provide information about intrinsic mechanisms operated inside. In general, the ratio between electron and phonon specific heat Ce/Cp shows how the absorbed energy shared between electron and phonon subsystems. In this work we make estimations for amplitude-modulated absorption of THz radiation technique for investigation of the ratio Ce/Cp in superconducting Niobium Nitride (NbN) at T = Tc. Our results indicates that experimentally the frequency of modulation has to be extra large to extract the quantity. We perform a new technique allowed to work at low frequency with accurately measurement of absorbed power.
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Elmanova, A., An, P., Kovalyuk, V., Golikov, A., Elmanov, I., & Goltsman, G. (2020). Study of silicon nitride O-ring resonator for gas-sensing applications. In J. Phys.: Conf. Ser. (Vol. 1695, 012124).
Abstract: In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
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Shurakov, A., Mikhailov, D., Belikov, I., Kaurova, N., Zilberley, T., Prikhodko, A., et al. (2020). Planar Schottky diode with a Γ-shaped anode suspended bridge. In J. Phys.: Conf. Ser. (Vol. 1695, 012154).
Abstract: In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
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