Heusinger, M. A., Nebosis, R. S., Schatz, W., Renk, K. F., Gol’tsman, G. N., Karasik, B. S., et al. (1993). Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 193–195).
Abstract: We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films.
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Sergeev, A. V., & Livanov, D. V. (1993). Phonon renormalization of thermoelectric power of high-Tc materials. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 204–205).
Abstract: Renormalization of thermoelectric power due to Nielsen — Taylor effect (interference between electron-phonon and electron- impurity interactions) is used for the explanation of the temperature dependence and sign of the thermopower in high-Tc materials. In the framework of the model the negative sign of TEP of untwinned YBa2Cu3O7−x crystal in a-direction observed by Howson et. al. is connected to the strong hole scattering via O-vacancies in chains.
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Sergeev, A. V., Aksaev, E. E., Gogidze, I. G., Gol’tsman, G. N., Semenov, A. D., & Gershenzon, E. M. (1993). Thermal boundary resistance at YBaCuO film-substrate interface. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 405–406).
Abstract: The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
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Prober, D. E. (1993). Superconducting terahertz mixer using a transition-edge microbolometer. Appl. Phys. Lett., 62(17), 2119–2121.
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Prober, D. E. (1993). Superconducting terahertz mixer using a transition-edge microbolometer. Department of Applied Physics and Physics, Yale University, New Haven, Connecticut 06520-2157, , 2119–2121.
Abstract: We present a new device concept for a mixer element for THz frequencies. This uses a superconducting transition-edge microbridge biased at the center of its superconducting transition near 4.2 K. It is fed from an antenna or waveguide structure. Power from a local oscillator and a rf signal produce a temperature and resulting resistance variation at the difference frequency. The new aspect is the use of a very short bridge in which rapid ( < 0.1 ns) outdiffision of hot electrons occurs. This gives large intermediate frequency (if) response. The mixer offers ~4 GHz if bandwidth, z 80 Cl rf resistive impedance, good match to the if amplifier, and requires only l-20 nW of local oscillator power. The upper rf frequency is determined by antenna or waveguide properties. Predicted mixer conversion efficiency is l/8, and predicted double-sideband receiver noise temperatures are 260 and 90 K for transition widths of 0.1 and 0.5 T, respectively.
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