Verevkin, A. I., Ptitsina, N. G., Chulkova, G. M., Gol'tsman, G. N., Gershenzon, E. M., & Yngvesson, K. S. (1995). Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures. JETP Lett., 61(7), 591–595.
Abstract: The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.
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Semenov, A. D., Nebosis, R. S., Gousev, Y. P., Heusinger, M. A., & Renk, K. F. (1995). Analysis of the nonequilibrium photoresponse of superconducting films to pulsed radiation by use of a two-temperature model. Phys. Rev. B, 52(1), 581–590.
Abstract: Photoresponse of a superconducting film in the resistive state to pulsed radiation has been studied in the framework of a model assuming that two different effective temperatures can be assigned to the quasiparticle and phonon nonequilibrium distributions. The coupled electron-phonon-substrate system is described by a system of time-dependent energy-balance differential equations for effective temperatures. An analytical solution of the system is given and calculated voltage transients are compared with experimental photoresponse signals taking into account the radiation pulse shape and the time resolution of the readout electronics. It is supposed that a resistive state (vortices, fluxons, network of intergrain junctions, hot spots, phase slip centers) provides an ultrafast connection between electron temperature changes and changes of the film resistance and thus plays a minor role in the temporal evolution of the response. In accordance with experimental observations a two-component response was revealed from simulations. The slower component corresponds to a bolometric mechanism while the fast component is connected with the relaxation of the electron temperature. Calculated photoresponse transients are presented for different ratios of the electron and phonon specific heat, radiation pulse durations and fluences, and frequency band passes of registration electronics. From the amplitude of the bolometric component we determine the radiation energy absorbed in a film. This enables us to reveal an intrinsic electron-phonon scattering time even if it is much shorter than the time resolution of readout electronics. We analyze experimental voltage transients for NbN, YBa2Cu3O7, and TlBa2Ca2Cu3O9 superconducting films and find the electron-phonon interaction times at the transition temperatures of 17, 2.5, and 1.8 ps, respectively. The values are in reasonable agreement with data of other experiments.
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Karasik, B. S., & Elantiev, A. I. (1995). Analysis of the noise performance of a hot-electron superconducting bolometer mixer. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 229–246). Pasadena, Ca.
Abstract: A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done.
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Hesler, J. L., Crowe, T. W., Bradley, R. F., Pan, S. K., & Chattopadhyay, G. (1995). The design, construction and evaluation of a 585 GHz planar Schottky mixer. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 34–43). Pasadena, Ca.
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Okunev, 0., Dzardranov, A., Gol'tsman, G., & Gershenzon, E. (1995). Performances of hot—electron superconducting mixer for frequencies less than the gap energy: NbN mixer for 100 GHz operation. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 247–253).
Abstract: The possibilities to improve the parameters of the 100 GHz NbN HEB superconducting waveguide mixers have been studied. The device consists of a signal strip 1 gm wide by 2 Am long made of 40 A thick NbN film. The best operation point was found at 5 K, where the mixer bandwidth made up 1.5-2 GHz and the total loss diminished down to 8 dB. The critical current density has been increased up to " 40 6 A/cm 2 , the noise temperature of the receiver (DSB) has reduced down to 450 K and the local oscillator power has decreased down to -.4).1 mcV.
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