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(1997). ГОСТ Р 50995.0.1-96. Технологическое обеспечение создания продукции. Основные положения.
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Boreman, G. D. (1997). Infrared microantennas. SPIE, 3110, 882–885.
Abstract: We present results of mesurments of the polarization response of asymetric spiral antennas coupled Ni-NiO-Ni diodes, over the wavelength range 10.2 to 10.7 μm. The feed structure of the antenna imposes an elliptical polarization singature that is different from the circular polarization expected from a symmetric spiral. We develop a lossy-transmission-line model yielding the measured polarization response. A combination of a balanced and an unbalanced mode is required. Reflected current waves from the arm ends are significant.
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Cherednichenko, S., Yagoubov, P., Il'in, K., Gol'tsman, G., & Gershenzon, E. (1997). Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers. In Proc. 27th Eur. Microwave Conf. (Vol. 2, pp. 972–977). IEEE.
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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Cherednichenko, S., Yagoubov, P., Il'In, K., Gol'tsman, G., & Gershenzon, E. (1997). Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 245–257).
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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de Lange, G., Hu, Q., Huang, H., & Lichtenberger, A. W. (1997). Development of a 170-210 GHz 3×3 micromachined SIS imaging array. In Proc. 8th Int. Symp. Space Terahertz Technol. (518).
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Ekstörm, H., Kollberg, E., Yagoubov, P., Gol'tsman, G., Gershenzon, E., & Yngvesson, S. (1997). Gain and noise bandwidth of NbN hot-electron bolometric mixers. Appl. Phys. Lett., 70(24), 3296–3298.
Abstract: We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
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Ekström, H., Kollberg, E., Yagoubov, P., Gol'tsman, G., Gershenzon, E., & Yngvesson, S. (1997). Phonon cooled ultra thin NbN hot electron bolometer mixers at 620 GHz. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 29–35).
Abstract: We have measured the noise performance and gain bandwidth of 35 A thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. A double-sideband receiver noise temperature less than 1300 K has been obtained with a 3 dB bandwidth of GHz. The gain bandwidth is 3.2 GHz. A lower noise temperature of 1100 K has been achieved with an improved set-up. The mixer output noise dominated by thermal fluctuations is about 50-60 K, and the SSB receiver and intrinsic conversion gain is about -18 and -12 dB, respectively. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
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Gerecht, E., Musante, C. F., Wang, Z., Yngvesson, K. S., Waldman, J., Gol'tsman, G. N., et al. (1997). NbN hot electron bolometric mixer for 2.5 THz: the phonon cooled version. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 258–271).
Abstract: We describe an investigation of a NbN HEB mixer for 2.5 THz. NbN HEBs are phonon-cooled de-. vices which are expected, according to theory, to achieve up to 10 GHz IF conversion gain bandwidth. We have developed an antenna coupled device using a log-periodic antenna and a silicon lens. We have demon- strated that sufficient LO power can be coupled to the device in order to bring it to the optimum mixer oper- ating point. The LO power required is less than 1 microwatts as measured directly at the device. We also describe the impedance characteristics of NbN devices and compare them with theory. The experimental results agree with theory except for the imaginary part of the impedance at very low frequencies as was demonstrated by other groups.
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Gerecht, E., Musante, C. F., Yngvesson, K. S., Waldman, J., Gol'tsman, G. N., Yagoubov, P. A., et al. (1997). Optical coupling and conversion gain for NbN HEB mixer at THz frequencies. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 47–50).
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Gousev, Y. P., Semenov, A. D., Goghidze, I. G., Pechen, E. V., Varlashkin, A. V., Gol'tsman, G. N., et al. (1997). Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer. IEEE Trans. Appl. Supercond., 7(2), 3556–3559.
Abstract: We investigated the output noise of a YBa2Cu3O7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources.
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