Semenov, A. D., Gol'tsman, G. N., & Sobolewski, R. (2002). Hot-electron effect in superconductors and its applications for radiation sensors. Supercond. Sci. Technol., 15(4), R1–R16.
Abstract: The paper reviews the main aspects of nonequilibrium hot-electron phenomena in superconductors and various theoretical models developed to describe the hot-electron effect. We discuss implementation of the hot-electron avalanche mechanism in superconducting radiation sensors and present the most successful practical devices, such as terahertz mixers and direct intensity detectors, for far-infrared radiation. Our presentation also includes the novel approach to hot-electron quantum detection implemented in superconducting x-ray to optical photon counters.
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Sobolewski, R., Xu, Y., Zheng, X., Williams, C., Zhang, J., Verevkin, A., et al. (2002). Spectral sensitivity of the NbN single-photon superconducting detector. IEICE Trans. Electron., E85-C(3), 797–802.
Abstract: We report our studies on the spectral sensitivity of superconducting NbN thin-film single-photon detectors (SPD's) capable of GHz counting rates of visible and near-infrared photons. In particular, it has been shown that a NbN SPD is sensitive to 1.55-µm wavelength radiation and can be used for quantum communication. Our SPD's exhibit experimentally measured intrinsic quantum efficiencies from 20% at 800 nm up to 1% at 1.55-µm wavelength. The devices demonstrate picosecond response time (<100 ps, limited by our readout system) and negligibly low dark counts. Spectral dependencies of photon counting of continuous-wave, 0.4-µm to 3.5-µm radiation, and 0.63-µm, 1.33-µm, and 1.55-µm laser-pulsed radiations are presented for the single-stripe-type and meander-type devices.
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Kawamura, J., Hunter, T. R., Tong, C. Y. E., Blundell, R., Papa, D. C., Patt, F., et al. (2002). Ground-based terahertz CO spectroscopy towards Orion. A&A, 394(1), 271–274.
Abstract: Using a superconductive hot-electron bolometer heterodyne receiver on the 10-m Heinrich Hertz Telescope on Mount Graham, Arizona, we have obtained velocity-resolved 1.037 THz CO () spectra toward several positions along the Orion Molecular Cloud (OMC-1) ridge. We confirm the general results of prior observations of high-J CO lines that show that the high temperature, , high density molecular gas, , is quite extended, found along a ~ region centered on BN/KL. However, our observations have significantly improved angular resolution, and with a beam size of we are able to spatially and kinematically discriminate the emission originating in the extended quiescent ridge from the very strong and broadened emission originating in the compact molecular outflow. The ridge emission very close to the BN/KL region appears to originate from two distinct clouds along the line of sight with and ≈ . The former component dominates the emission to the south of BN/KL and the latter to the north, with a turnover point coincident with or near BN/KL. Our evidence precludes a simple rotation of the inner ridge and lends support to a model in which there are multiple molecular clouds along the line of sight towards the Orion ridge.
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Maslennikov, S., Antipov, S., Shishkov, A., Svechnikov, S., Voronov, B., Smirnov, K., et al. (2002). NbN HEB mixer noise temperature measurements with hot/cold load mounted inside the helium cryostat at 300 GHz. In Proc. Int. Student Seminar on Microwave Appl. of Novel Physical Phenomena supported by IEEE. St.-Petersburg: LETI.
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Vahtomin, Y. B., Finkel, M. I., Antipov, S. V., Voronov, B. M., Smirnov, K. V., Kaurova, N. S., et al. (2002). Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si. In Harvard university (Ed.), Proc. 13th Int. Symp. Space Terahertz Technol. (pp. 259–270). Cambridge, MA, USA.
Abstract: We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
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