(2005). Single aperture far-infrared observatory.
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(2005). ГОСТ Р 51904-2002. Программное обеспечение встроенных систем. Общие требования к разработке и документированию.
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Alda, J., Rico-García, J. M., López-Alonso, J. M., & Boreman, G. (2005). Optical antennas for nano-photonic applications. Nanotech., 16(5), S230–S234.
Abstract: Antenna-coupled optical detectors, also named optical antennas, are being developed and proposed as alternative detection devices for the millimetre, infrared, and visible spectra. Optical and infrared antennas represent a class of optical components that couple electromagnetic radiation in the visible and infrared wavelengths in the same way as radioelectric antennas do at the corresponding wavelengths. The size of optical antennas is in the range of the detected wavelength and they involve fabrication techniques with nanoscale spatial resolution. Optical antennas have already proved and potential advantages in the detection of light showing polarization dependence, tuneability, and rapid time response. They also can be considered as point detectors and directionally sensitive elements. So far, these detectors have been thoroughly tested in the mid-infrared with some positive results in the visible. The measurement and characterization of optical antennas requires the use of an experimental set-up with nanometric resolution. On the other hand, a computation simulation of the interaction between the material structures and the incoming electromagnetic radiation is needed to explore alternative designs of practical devices.
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An, Z., Chen, J. - C., Ueda, T., Komiyama, S., & Hirakawa, K. (2005). Infrared phototransistor using capacitively coupled two-dimensional electron gas layers. Appl. Phys. Lett., 86, 172106-3.
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Barends, R., Hajenius, M., Gao, J. R., & Klapwijk, T. M. (2005). Current-induced vortex unbinding in bolometer mixers. Appl. Phys. Lett., 87, 263506 (1 to 3).
Abstract: We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth.
Keywords: HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile
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