|
Koshelets, V. P., & Khudchenko, A. V. (2006). Analysis of spectral characteristics of a superconducting integrated receiver. J. Communications Technol. Electron., 51(5), 596–603.
|
|
Koshelets, V. P., & Khudchenko, A. V. (2006). Analysis of spectral characteristics of a superconducting integrated receiver. J. Communications Technol. Electron., 51(5), 596–603.
|
|
(2006). Atacama Pathfinder Experiment APEX.
|
|
Kenyon, M., Day, P. K., Bradford, C. M., Bock, J. J., & Leduc, H. G. (2006). Background-limited membrane-isolated TES bolometers for far-IR/submillimeter direct-detection spectroscopy. Nucl. Instr. & Meth. Phys. Res. A, 559, 456–458.
|
Gao, J. R., Hajenius, M., Tichelaar, F. D., Voronov, B., Grishina, E., Klapwijk, T. M., et al. (2006). Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 187–189).
Abstract: We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
|
