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Elvira, D., Michon, A., Fain, B., Patriarche, G., Beaudoin, G., Robert-Philip, I., et al. (2010). Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm. Appl. Phys. Lett., 97(13), 131907 (1 to 3).
Abstract: By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.
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Feofanov, A. K., Oboznov, V. A., Bol'Ginov, V. V., Lisenfeld, J., Poletto, S., Ryazanov, V. V., et al. (2010). Implementation of superconductor/ferromagnet/ superconductor. Nat. Phys., 6(8), 593–597.
Abstract: High operation speed and low energy consumption may allow the superconducting digital single-flux-quantum circuits to outperform traditional complementary metal-oxide-semiconductor logic. The remaining major obstacle towards high element densities on-chip is a relatively large cell size necessary to hold a magnetic flux quantum Φ0. Inserting a π-type Josephson junction in the cell is equivalent to applying flux Φ0/2 and thus makes it possible to solve this problem. Moreover, using π-junctions in superconducting qubits may help to protect them from noise. Here we demonstrate the operation of three superconducting circuits-two of them are classical and one quantum-that all utilize such π-phase shifters realized using superconductor/ferromagnet/superconductor sandwich technology. The classical circuits are based on single-flux-quantum cells, which are shown to be scalable and compatible with conventional niobium-based superconducting electronics. The quantum circuit is a π-biased phase qubit, for which we observe coherent Rabi oscillations. We find no degradation of the measured coherence time compared to that of a reference qubit without a π-junction.
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Freer, E. M., Grachev, O., Duan, X., Martin, S., & Stumbo, D. P. (2010). High-yield self-limiting single-nanowire assembly with dielectrophoresis. Nat. Nanotech., 5(7), 525–530.
Abstract: Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly.
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Gaggero, A., Nejad, S. J., Marsili, F., Mattioli, F., Leoni, R., Bitauld, D., et al. (2010). Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl. Phys. Lett., 97(15), 3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Goltsman, G. N., Korneev, A. A., Finkel, M. I., Divochiy, A. V., Florya, I. N., Korneeva, Y. P., et al. (2010). Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter. In 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves (p. 1).
Abstract: We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications.
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