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Ghali, M., Ohtani1, K., Ohno, Y., & Ohno, H. (2012). Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field. Nat. Comm., 3(661), 6.
Abstract: Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.
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Grotz, B., Hauf, M. V., Dankerl, M., Naydenov, B., Pezzagna, S., Meijer, J., et al. (2012). Charge state manipulation of qubits in diamond. Nat. Comm., 3(729), 6.
Abstract: The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV- into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV-. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+.
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Minaeva, O., Fraine, A., Korneev, A., Divochiy, A., Goltsman, G., & Sergienko, A. (2012). High resolution optical time-domain reflectometry using superconducting single-photon detectors. In Frontiers in Opt. 2012/Laser Sci. XXVIII (Fw3a.39). Optical Society of America.
Abstract: We discuss the advantages and limitations of single-photon optical time-domain reflectometry with superconducting single-photon detectors. The higher two-point resolution can be achieved due to superior timing performance of SSPDs in comparison with InGaAs APDs.
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Pütz, P., Honingh, C. E., Jacobs, K., Justen, M., Schultz, M., & Stutzki, J. (2012). Terahertz hot electron bolometer waveguide mixers for GREAT. A&A, 542, L2.
Abstract: Context. Supplementing the publications based on the first-light observations with the German REceiver for Astronomy at Terahertz frequencies (GREAT) on SOFIA, we present background information on the underlying heterodyne detector technology. This Letter complements the GREAT instrument Letter and focuses on the mixers itself.
Aims. We describe the superconducting hot electron bolometer (HEB) detectors that are used as frequency mixers in the L1 (1400 GHz), L2 (1900 GHz), and M (2500 GHz) channels of GREAT. Measured performance of the detectors is presented and background information on their operation in GREAT is given.
Methods. Our mixer units are waveguide-based and couple to free-space radiation via a feedhorn antenna. The HEB mixers are designed, fabricated, characterized, and flight-qualified in-house. We are able to use the full intermediate frequency bandwidth of the mixers using silicon-germanium multi-octave cryogenic low-noise amplifiers with very low input return loss.
Results. Superconducting HEB mixers have proven to be practical and sensitive detectors for high-resolution THz frequency spectroscopy on SOFIA. We show that our niobium-titanium-nitride (NbTiN) material HEBs on silicon nitride (SiN) membrane substrates have an intermediate frequency (IF) noise roll-off frequency above 2.8 GHz, which does not limit the current receiver IF bandwidth. Our mixer technology development efforts culminate in the first successful operation of a waveguide-based HEB mixer at 2.5 THz and deployment for radioastronomy. A significant contribution to the success of GREAT is made by technological development, thorough characterization and performance optimization of the mixer and its IF interface for receiver operation on SOFIA. In particular, the development of an optimized mixer IF interface contributes to the low passband ripple and excellent stability, which GREAT demonstrated during its initial successful astronomical observation runs.
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Pernice, W., Schuck, C., Minaeva, O., Li, M., Goltsman, G. N., Sergienko, A. V., et al. (2012). High speed and high efficiency travelling wave single-photon detectors embedded in nanophotonic circuits (Vol. 1108.5299). arXiv:1108.5299v2 [physics.optics]. Retrieved May 9, 2024, from https://arxiv.org/abs/1108.5299v2
Abstract: Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides which allows us to drastically increase the absorption length for incoming photons. When operating the detectors close to the critical current we achieve high on-chip single photon detection efficiency up to 91% at telecom wavelengths, with uncertainty dictated by the variation of the waveguide photon flux. We also observe remarkably low dark count rates without significant compromise of detection efficiency. Furthermore, our detectors are fully embedded in a scalable silicon photonic circuit and provide ultrashort timing jitter of 18ps. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics.
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