Kovalyuk, V., Ferrari, S., Kahl, O., Semenov, A., Shcherbatenko, M., Lobanov, Y., et al. (2017). On-chip coherent detection with quantum limited sensitivity. Sci Rep, 7(1), 4812.
Abstract: While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon's frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/f exceeding 10(11). By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously.
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Kovalyuk, V., Ferrari, S., Kahl, O., Semenov, A., Lobanov, Y., Shcherbatenko, M., et al. (2017). Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application.
Abstract: By adopting a travelling-wave geometry approach, integrated superconductor- nanophotonic devices were fabricated. The architecture consists of a superconducting NbN- nanowire atop of a silicon nitride (Si 3 N 4 ) nanophotonic waveguide. NbN-nanowire was operated as a single-photon counting detector, with up to 92% on-chip detection efficiency (OCDE), in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 10^6 in C-band at 1550 nm wavelength.
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Goltsman, G. (2017). Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors. In 16th ISEC (Th-I-QTE-03 (1 to 3)).
Abstract: We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device.
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Kahl, O., Ferrari, S., Kovalyuk, V., Vetter, A., Lewes-Malandrakis, G., Nebel, C., et al. (2017). Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits. Optica, 4(5), 557–562.
Abstract: The detection of individual photons by superconducting nanowire single-photon detectors is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multicolor imaging techniques, such as single-photon spectroscopy, fluorescence resonance energy transfer microscopy, and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz at 80% of the devices' critical current. We demonstrate multidetector devices for telecommunication and visible wavelengths, and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength-division multiplexing on a chip.
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Finkel, M., Thierschmann, H., Galatro, L., Katan, A. J., Thoen, D. J., de Visser, P. J., et al. (2017). Performance of THz components based on microstrip PECVD SiNx technology. IEEE Trans. THz Sci. Technol., 7(6), 765–771.
Abstract: We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.
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