Moskotin, M. V., Gayduchenko, I. A., Goltsman, G. N., Titova, N., Voronov, B. M., Fedorov, G. F., et al. (2018). Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes. In J. Phys.: Conf. Ser. (Vol. 1124, 051050 (1 to 5)).
Abstract: In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
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Gayduchenko, I., Fedorov, G., Titova, N., Moskotin, M., Obraztsova, E., Rybin, M., et al. (2018). Towards to the development of THz detectors based on carbon nanostructures. In J. Phys.: Conf. Ser. (Vol. 1092, 012039 (1 to 4)).
Abstract: Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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Zolotov, P., Divochiy, A., Vakhtomin, Y., Seleznev, V., Morozov, P., & Smirnov, K. (2018). Superconducting single-photon detectors made of ultra-thin VN films. In KnE Energy (Vol. 3, pp. 83–89).
Abstract: We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I
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Florya, I. N., Korneeva, Y. P., Mikhailov, M. Y., Devizenko, A. Y., Korneev, A. A., & Goltsman, G. N. (2018). Photon counting statistics of superconducting single-photon detectors made of a three-layer WSi film. Low Temp. Phys., 44(3), 221–225.
Abstract: Superconducting nanowire single-photon detectors (SNSPD) are used in quantum optics when record-breaking time resolution, high speed, and exceptionally low levels of dark counts (false readings) are required. Their detection efficiency is limited, however, by the absorption coefficient of the ultrathin superconducting film for the detected radiation. One possible way of increasing the detector absorption without limiting its broadband response is to make a detector in the form of several vertically stacked layers and connect them in parallel. For the first time we have studied single-photon detection in a multilayer structure consisting of three superconducting layers of amorphous tungsten silicide (WSi) separated by thin layers of amorphous silicon. Two operating modes of the detector are illustrated: an avalanche regime and an arm-trigger regime. A shift in these modes occurs at currents of ∼0.5–0.6 times the critical current of the detector.
This work was supported by technical task No. 88 for scientific research at the National Research University “Higher School of Economics,” Grant No. 14.V25.31.0007 from the Ministry of Education and Science of Russia, and the work of G. N. Goltsman was supported by task No. 3.7328.2017/VU of the Ministry of Education and Science of Russia.
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Gayduchenko, I. A., Moskotin, M. V., Matyushkin, Y. E., Rybin, M. G., Obraztsova, E. D., Ryzhii, V. I., et al. (2018). The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts. In Materials Today: Proc. (Vol. 5, pp. 27301–27306).
Abstract: We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.
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