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Saveskul, N. A., Titova, N. A., Baeva, E. M., Semenov, A. V., Lubenchenko, A. V., Saha, S., et al. (2019). Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder. arXiv:1903.05009v3 [cond-mat.mtrl-sci]. Retrieved May 2, 2024, from https://arxiv.org/abs/1903.05009v3
Abstract: We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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Tretyakov, I., Svyatodukh, S., Chumakova, A., Perepelitsa, A., Kaurova, N., Shurakov, A., et al. (2019). Room temperature silicon detector for IR range coated with Ag2S quantum dots. In IRMMW-THz.
Abstract: A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
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