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Tiulina, V., Iomdina, E., Goltsman, G., Seliverstov, S., Sianosyan, A., Teplyakova, K., et al. (2019). UVB promotes the initiation of uveitic inflammatory and changes in thehydration of the cornea in vivo (Vol. 9).
Abstract: Recently, active research has been conducted in the field of terahertz (THz) scanning of human tissues for noninvasive determination of their hydration level, which haves hown high diagnostic efficiency of this technology in various pathological conditions. Recently, we have developed a laboratory model of the facility for monitoring the state of the water balance of the cornea using THz scanning in vivo, which opens up the possibility of applying this approach in ophthalmology. The aim of the work wasto compare the results of the THz scan of the cornea with its clinical changes using the example of an experimental model of the UV induced keratouveitis. Anexperimental study, which included a comprehensive assessment of clinical changes in the cornea of rabbits during keratouveitis induction, revealed a decrease in the stability of the tear film, pathological changes in the corneal epithelium and stroma, as well as its anatomical and optical parameters. Comparison of data obtained in the THz scan of the cornea with tears production, optical coherence tomography and confocal microscopy showed their consistency in all observation periods, which allows us to conclude that the developed laboratory setup works and the feasibility of further research to promote the corneal hydration evaluation technology in clinical practice. Acknowledgements: Research was funded by the RSF, grant number 161500255.
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Saveskul, N. A., Titova, N. A., Baeva, E. M., Semenov, A. V., Lubenchenko, A. V., Saha, S., et al. (2019). Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder. arXiv:1903.05009v3 [cond-mat.mtrl-sci]. Retrieved May 19, 2024, from https://arxiv.org/abs/1903.05009v3
Abstract: We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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Tretyakov, I., Shurakov, A., Perepelitsa, A., Kaurova, N., Svyatodukh, S., Zilberley, T., et al. (2019). Room temperature silicon detector for IR range coated with Ag2S quantum dots. Phys. Status Solidi RRL, 13(9), 1900187–(1–6).
Abstract: For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.
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Saveskul, N. A., Titova, N. A., Baeva, E. M., Semenov, A. V., Lubenchenko, A. V., Saha, S., et al. (2019). Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder. Phys. Rev. Applied, 12(5), 054001.
Abstract: We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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Ferrari, S., Kovalyuk, V., Vetter, A., Lee, C., Rockstuhl, C., Semenov, A., et al. (2019). Analysis of the detection response of waveguide-integrated superconducting nanowire single-photon detectors at high count rate. Appl. Phys. Lett., 115(10), 101104.
Abstract: Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography.
We acknowledge support through ERC Consolidator Grant No. 724707 and from the Deutsche Forschungsgemeinschaft through Project No. PE 1832/5-1,2, as well as funding by the Volkswagen Foundation. This project has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 675745. V.K. and G.G. acknowledge support from the Russian Science Foundation Project No. 16-12-00045 (NbN film deposition and testing). A.V. acknowledges support from the Karlsruhe School of Optics and Photonics (KSOP).
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