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Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. Performance of THz components based on microstrip PECVD SiNx technology 2017 IEEE Trans. THz Sci. Technol. 10.1109/TTHZ.2017.2759507 details   doi
Seliverstov, S. V.; Anfertyev, V. A.; Tretyakov, I. V.; Ozheredov, I. A.; Solyankin, P. M.; Revin, L. S.; Vaks, V. L.; Rusova, A. A.; Goltsman, G. N.; Shkurinov, A. P. Terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser 2017 Radiophys. Quant. Electron. 10.1007/s11141-017-9822-y details   doi
Goltsman, G. Superconducting thin film as infrared heterodyne and direct detectors 2017 16th ISEC 10.1109/Isec.2017.8314188 details   doi
Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. Development of a silicon membrane-based multipixel hot electron bolometer receiver 2017 IEEE Trans. Appl. Supercond. 10.1109/TASC.2017.2665585 details   doi
Korneeva, Y.; Florya, I.; Vdovichev, S.; Moshkova, M.; Simonov, N.; Kaurova, N.; Korneev, A.; Goltsman, G. Comparison of hot spot formation in nbn and mon thin superconducting films after photon absorption 2017 IEEE Trans. Appl. Supercond. 10.1109/TASC.2017.2659661 details   doi
Korneev, A.; Semenov, A.; Vodolazov, D.; Gol’tsman, G. N.; Sobolewski, R. Physics and operation of superconducting single-photon devices 2017 Superconductors at the Nanoscale 10.1515/9783110456806-010 details   doi
Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system 2017 EPJ Web Conf. 10.1051/epjconf/201713201004 details   doi
Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. High resolution THz gas spectrometer based on semiconductor and superconductor devices 2017 EPJ Web Conf. 10.1051/epjconf/201713202001 details   doi
Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers 2017 IEEE Trans. Terahertz Sci. Technol. 10.1109/Tthz.2016.2630845 details   doi
Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. Photon absorption near the gap frequency in a hot electron bolometer 2017 IEEE Trans. Appl. Supercond. 10.1109/Tasc.2016.2630032 details   doi
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