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Author Title (up) Year Publication Volume Pages
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. Absorption spectra in electron transitions between excited states of impurities in germanium 1975 JETP Lett. 22 95-97
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon 1971 JETP Lett. 14 185-186
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. Carrier lifetime in excited states of shallow impurities in germanium 1977 JETP Lett. 25 539-543
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Cross section for binding of free carriers into excitons in germanium 1981 JETP Lett. 33 574
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409