Author  |
Title |
Year |
Publication |
Volume |
Pages |
| Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
2017 |
IEEE Trans. Terahertz Sci. Technol. |
7 |
53-59 |
| Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. |
Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method |
2016 |
Proc. 27th Int. Symp. Space Terahertz Technol. |
|
30-32 |
| Ekström, H.; Kroug, M.; Belitsky, V.; Kollberg, E.; Olsson, H.; Goltsman, G.; Gershenzon, E.; Yagoubov, P.; Voronov, B.; Yngvesson, S. |
Hot electron mixers for THz applications |
1996 |
Proc. 30th ESLAB |
|
207-210 |
| Belitsky, V.; Desmaris, V.; Dochev, D.; Meledin, D.; Pavolotsky, A. |
Towards Multi-Pixel Heterodyne Terahertz Receivers |
2011 |
Proc. 22th Int. Symp. Space Terahertz Technol. |
|
|
| Belitsky, V. Yu.; Kollberg, E. L. |
Tuning circuit for NbN SIS mixer |
1996 |
Proc. 7th Int. Symp. Space Terahertz Technol. |
|
234 |
