| Author |
Title |
Year |
Publication |
Volume |
Pages  |
| Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
1995 |
JETP Lett. |
61 |
591-595 |
| Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
1988 |
Fizika i Tekhnika Poluprovodnikov |
22 |
540-543 |
| Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
1996 |
J. of Communications Technology and Electronics |
41 |
408-414 |
| Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
Electron–phonon interaction in disordered conductors |
1999 |
Phys. Rev. B Condens. Matter |
263-264 |
190-192 |
| Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
2002 |
Mater. Sci. Forum |
384-3 |
107-116 |
