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Author Title (up) Year Publication Volume Pages
Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures 1995 JETP Lett. 61 591-595
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate 1997 Phys. Rev. B 56 10089-10096
Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G. Electron-phonon relaxation time in ultrathin tungsten silicon film 2018 arXiv
Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. Electron–phonon interaction in disordered conductors 1999 Phys. Rev. B Condens. Matter 263-264 190-192
Gol’tsman, G.; Okunev, O.; Chulkova, G.; Lipatov, A.; Dzardanov, A.; Smirnov, K.; Semenov, A.; Voronov, B.; Williams, C.; Sobolewski, R. Fabrication and properties of an ultrafast NbN hot-electron single-photon detector 2001 IEEE Trans. Appl. Supercond. 11 574-577