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Author Title Year Publication Volume Pages (down)
Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes 2007 J. Appl. Phys. 101 124508 (1 to 6)
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer 2019 Supercond. Sci. Technol. 32 075003
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency 2017 Proc. 28th Int. Symp. Space Terahertz Technol. 147-148
Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers 2017 IEEE Trans. Terahertz Sci. Technol. 7 53-59
Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method 2016 Proc. 27th Int. Symp. Space Terahertz Technol. 30-32