| |
Author |
Title |
Year  |
Publication |
Volume |
Pages |
Links |
|
|
Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
2007 |
J. Appl. Phys. |
101 |
124508 (1 to 6) |
|
|
|
Belitsky, V.; Desmaris, V.; Dochev, D.; Meledin, D.; Pavolotsky, A. |
Towards Multi-Pixel Heterodyne Terahertz Receivers |
2011 |
Proc. 22th Int. Symp. Space Terahertz Technol. |
|
|
|
|
|
Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. |
Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method |
2016 |
Proc. 27th Int. Symp. Space Terahertz Technol. |
|
30-32 |
|
|
|
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. |
Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency |
2017 |
Proc. 28th Int. Symp. Space Terahertz Technol. |
|
147-148 |
|
|
|
Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
2017 |
IEEE Trans. Terahertz Sci. Technol. |
7 |
53-59 |
|
