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Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. Response of carbon nanotube film transistor to the THz radiation 2018 EPJ Web Conf. 195 05012 (1 to 2) details   doi
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation 2021 Adv. Electron. Mater. 7 2000872 details   doi
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts 2018 Materials Today: Proc. 5 27301-27306 details   doi
Gayduchenko, I. A.; Fedorov, G. E.; Stepanova, T. S.; Titova, N.; Voronov, B. M.; But, D.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N. Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation 2016 J. Phys.: Conf. Ser. 741 012143 (1 to 6) details   doi
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. Graphene-layer and graphene-nanoribbon FETs as THz detectors 2018 J. Phys.: Conf. Ser. 1124 051054 details   doi
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