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Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures 1995 JETP Lett. 61 591-595 details   url
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions 2002 Mater. Sci. Forum 384-3 107-116 details   url
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure 1989 Sov. Phys. and Technics of Semiconductors 23 843-846 details   url
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. Capture of free holes by charged acceptors in uniaxially deformed Ge 1988 Fizika i Tekhnika Poluprovodnikov 22 540-543 details   url
Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Zorin, M. A.; Sejdman, L. A.; Semenov, A. D. Picosecond range detector base on superconducting niobium nitride film sensitive to radiation in spectral range from millimeter waves up to visible light 1992 Sverkhprovodimost': Fizika, Khimiya, Tekhnika 5 955-960 details   url
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